BDX67
BDX67A
BDX67B
BDX67C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
7/99
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
V
CEO
Collector - emitter voltage (open base)
V
CBO
Collector - base voltage (open emitter)
V
EBO
Emitter - base voltage (open collector)
I
C
Collector current
I
CM
Collector current (peak)
I
B
Base current
P
tot
Total power dissipation at T
mb
= 25C
T
j
Maximum junction temperature
T
stj
Storage junction temperature
R
th j-mb
Thermal resistance, junction to mounting base.
60
80
100
120
V
80
100
120
140
V
5
5
5
5
V
16
A
20
A
250
mA
150
W
200
C
-65 to +200
C
1.17
K/ W
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(T
case
=25C unless otherwise stated)
TO3 Package.
Case connected to collector.
BDX BDX BDX BDX
67
67A
67B
67C
B
E
4 . 2
26.6 max.
39.
5 m
a
x
.
30
.
1
16.
9
1 0.9
2. 5
1.
0
12 .8
2
0
.3
m
a
x
.
9.0 max.
mA
mA
V
pF
kHz
V
BDX67
BDX67A
BDX67B
BDX67C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
7/99
ELECTRICAL CHARACTERISTICS
(T
j
= 25C, unless otherwise stated)
I
CEO
Collector cut-off current
I
EBO
Emitter cut-off current
h
FE
D.C. current gain (note 1)
V
BE
Base - emitter voltage (note 1)
C
c
Collector capacitance
f
hfe
Cut-off frequency
h
fe
Small signal current gain
V
F
Diode, forward voltage
I
E
= 0,
V
CB
= V
CEOmax
I
E
= 0, V
CB
= V
CBOmax,
T
j
= 200C
I
B
= 0,
V
CE
= V
CEOmax
I
C
= 0,
V
EB
= 5V
I
C
=1A,
V
CE
= 3V
I
C
= 10A,
V
CE
= 3V
I
C
= 16A,
V
CE
= 3V
I
C
= 10A,
V
CE
= 3V
I
E
= I
e
= 0, V
CB
= 10V f = 1MHz
I
C
= 5A,
V
CE
= 3V
I
Boff
= 0,
I
CC
= 7.8 A
t
p
= 1ms,
d < 1%
I
C
= 5A, V
CE
= 3V, f = 1MHz
I
F
= 10A
1
5
1
5
5200
1000
4000
2.5
300
50
20
2.5
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
Note 1: Measured under pulse conditions , t
p
< 300
ms, d < 2%
2
E
(BR)
Turn-off breakdown energy
with inductive load
V
CEsat
Collector - emitter saturation
voltage
I
C
= 10A,
I
B
= 40mA
V
150
mJ
I
CBO
Collector cut-off current
mA
R1 typ. 3K
W
R2 typ. 80
W
R2
R1
B
C
E
Circuit Diagram
PDF 
ZIP