Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
V
DSS
I
D
I
DM
, I
LM
V
GS
P
D
T
J
, T
STG
T
L
1
3
4
2
R
3 8 .0 (1 .4 9 6 )
3 8 .2 (1 .5 0 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
1 4 .9 (0 .5 8 7 )
1 5 .1 (0 .5 9 4 )
3 .3 (0 .1 2 9 )
3 .6 (0 .1 4 3 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
4 .0 (0 .1 5 7 )
(2 P la c e s)
R =
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
)
)
4 .1 (0 .1 6 1
4 .3 (0 .1 6 9
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
W =
H =
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
Hex Nut M 4
(4 places)
12.
6
(
0
.
4
9
6
)
12.
8
(
0
.
5
0
4
)
2
5
.
2 (
0
.
9
92
)
2
5
.
4 (
1
.
0
00
)
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
SOT227 Package Outline.
Dimensions in mm (inches)
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
and Inductive Current Clamped
Gate Source Voltage
Total Power Dissipation @ T
case
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
V
GS
= 0V , I
D
= 250
A
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 2.5mA
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
500
48
192
30
520
4.16
55 to 150
300
V
A
A
V
W
W / C
C
Drain Source Breakdown Voltage
On State Drain Current
2
Drain Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
500
48
0.10
250
1000
100
2
4
V
A
A
nA
V
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
BFC13
LAB
SEME
V
DSS
500V
I
D(cont)
48A
R
DS(on)
0.10
* Source 2 may be omitted,
shorted to Source 1 or used for
Gate drive circuit.
4TH GENERATION MOSFET
Terminal 1
Source 2*
Terminal 2
Drain
Terminal 3
Gate
Terminal 4
Source 1
BFC13
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
48
192
1.8
210
415
830
4
8.3
16
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.]
dl
s
/ dt = 100A/
s
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
C
Characteristic
Min.
Typ.
Max. Unit
3
5
2500
35
13
L
D
L
S
V
Isolation
C
Isolation
Torque
Internal Drain Inductance
(Measured From Drain Terminal to Centre of Die)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(5060 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
inlbs
Characteristic
Min.
Typ.
Max. Unit
0.24
0.05
R
JC
R
CS
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
C/W
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
pF
nC
ns
5570
6500
1170
1640
440
660
240
370
32
48
116
170
15
30
25
50
48
75
12
25
LAB
SEME
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
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