BFX29
Prelim.5/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
I
CM
Collector Current Peak
I
EM
Emitter Current Peak
P
tot
Total Power Dissipation T
amb
< 25C
T
stg
Storage Temperature
T
j
Operating Junction Temperature
60V
60V
5V
600mA
600mA
600mA
600 mW
65 to 200C
200C
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
General Purpose Industrial Applications
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
1
2
3
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tj = 25C unless otherwise stated)
BFX29
Prelim.5/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
EB
= 5.0V
I
C
= 0
V
EB
= 3V
I
C
= 0
V
CB
=60V
I
E
= 0
V
CB
=50V
I
E
= 0
T
j
= 100C
V
CE
=10V
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
=10V
I
C
= 50mA
V
CE
= 10V
I
C
= 150mA
I
C
= 150mA
I
B
= 15mA
I
C
= 30mA
I
B
= 1.0mA
I
C
= 150mA
I
B
= 15mA
V
CB
= 10V
I
E
= I
e
=0
f=1.0MH
z
V
EB
= 2.0V
I
C
= I
c
=0
f=1.0MH
z
V
CE
= 10V
I
C
= 50mA
f=100MH
z
T
amb
= 25C
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector Emitter
Saturation Voltage
Base Emitter Saturation Voltage
Collector Capactitance
Emitter Capactitance
Transistion Frequency
30
500
1.0
100
1.0
500
0.5
50
0.03
2.0
20
90
40
105
50
125
50
125
40
90
0.15
0.40
0.77
0.90
1.05
1.30
6
12
18
30
100
360
nA
nA
m
A
--
V
V
pF
MHz
I
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
C
tc
C
te
f
T
THERMAL CHARACTERISTICS
R
q
th(j-amb)
Thermal Resistance Junction to Ambient
292
C/W
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