D1001UK
9/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
50W
70V
20V
5A
65 to 150C
200C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W 28V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 16 dB MINIMUM
DA
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
24.76
0.13
0.975
0.005
B
18.42
0.13
0.725
0.005
C
45
5
45
5
D
6.35
0.13
0.25
0.005
E
3.17
0.13
0.125 DIA
0.005
F
5.71
0.13
0.225
0.005
G
9.52
0.13
0.375
0.005
H
6.60
REF
0.260
REF
I
0.13
0.02
0.005
0.001
J
4.32
0.13
0.170
0.005
K
2.54
0.13
0.100
0.005
M
20.32
0.25
0.800
0.010
D1001UK
9/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 20W
V
DS
= 28V
I
DQ
= 0.1A
f = 175MHz
V
DS
= 28V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
70
1
1
1
7
0.8
16
50
20:1
60
30
2.5
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 3.5C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
D1001UK
9/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
0
5
10
15
20
25
30
35
40
45
P out
W
0
10
20
30
40
50
60
70
80
90
Efficiency
%
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
in
W
Pout
Drain Efficiency
V
DS
= 28V
I
DQ
= 0.1A
f = 175MHz
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P
in
W
0
5
10
15
20
25
30
35
40
45
P out
W
10
11
12
13
14
15
16
17
18
19
Gain
dB
Pout
Gain
V
DS
= 28V
I
DQ
= 0.1A
f = 175MHz
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
0 5 10 15 20 25 30 35 40
P
out
W PEP
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
I
DQ
= 0.1A
I
DQ
= 0.5A
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
Figure 3 IMD vs. Output Power.
D1001UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency Z
S
Z
L
MHz
175MHz 5 + j14 12 j14
!Freq S11 S21 S12 S22
MHz mag ang mag ang mag ang mag ang
50 0.780 -116 18 112 0.034 25 0.642 -85
100 0.775 -135 9.312 85 0.030 11 0.577 -103
150 0.795 -149 6.077 68 0.022 14 0.613 -116
200 0.826 -159 4.193 53 0.017 44 0.669 -128
250 0.853 -169 3.216 43 0.023 74 0.715 -139
300 0.878 -179 2.566 35 0.039 89 0.759 -150
350 0.903 171 1.991 23 0.052 86 0.801 -161
400 0.923 161 1.655 18 0.070 84 0.839 -173
450 0.944 151 1.322 9 0.080 80 0.878 177
500 0.963 142 1.121 4 0.098 76 0.914 167
550 0.978 136 0.899 -2 0.108 72 0.945 159
600 0.985 131 0.762 -7 0.119 66 0.966 153
!
V
DS
= 28V, I
DQ
= 0.1A
# MHZ S MA R 50
Typical S Parameters
D1001UK
9/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
10K
10K
L2
L4
15
10nF
10nF
10-30pF
10-30pF
D1001UK
L1
4.7pF
1nF
100nF
10uF
L3
16-100pF
16-100pF
T1
T2
+28V
Gate-Bias
T3
9 x 6 mm
contact pad
9 x 6mm
contact
pad
T4
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
D1001UK 175MHz TEST FIXTURE
T1
10mm
T2
13mm
T3
12mm
T4
4mm
L1
1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2
10 turns 19swg enamelled copper wire, 6mm i.d.
L3
1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4
13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
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