D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
117W
70V
20V
15A
65 to 150C
200C
MECHANICAL DATA
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W 28V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 16 dB MINIMUM
DM
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
24.76
0.13
0.975
0.005
B
18.42
0.13
0.725
0.005
C
45
5
45
5
D
6.35
0.13
0.25
0.005
E
3.17 Dia.
0.13
0.125 Dia.
0.005
F
5.71
0.13
0.225
0.005
G
12.7 Dia.
0.13
0.500 Dia.
0.005
H
6.60
REF
0.260
REF
I
0.13
0.02
0.005
0.001
J
4.32
0.13
0.170
0.005
K
3.17
0.13
0.125
0.005
M
26.16
0.25
1.03
0.010
D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
1
1
1
7
2.4
16
50
20:1
180
90
7.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 3A
P
O
= 60W
V
DS
= 28V
I
DQ
= 0.3A
f = 175MHz
V
DS
= 0
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.5C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
20
30
40
50
60
70
80
%
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
Pout
W
10
Drain Efficiency
Pin W
Pout
Drain Efficiency
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
10
11
12
13
14
15
16
17
10
11
12
13
14
15
16
17
Gain
dB
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
0
20
40
60
80
100
120
Pout W PEP
-50
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
Idq = 0.3A
Idq = 2A
Figure 3 IMD vs. Output Power.
D1003UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
175MHz
2.0 j4.3 3.7 j4.5
!Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag
ang
70
0.83 -156.8
6.9
59.9
0.018
-16.7
0.65 -137.0
100
0.87 -163.3
4.3
46.9
0.012
-15.5
0.75 -147.2
150
0.91 -171.0
2.3
31.5
0.007
37.1
0.84 -159.7
200
0.93 -177.6
1.4
22.6
0.013
81.0
0.90 -168.8
250
0.95
177.6
0.9
14.3
0.022
86.6
0.93 -175.0
300
0.97
173.6
0.7
10.5
0.032
86.9
0.95
179.5
350
0.96
168.6
0.5
4.0
0.039
80.0
0.96
175.3
400
0.98
165.0
0.4
3.9
0.048
80.0
0.98
172.0
450
0.98
161.9
0.3
2.9
0.053
77.5
0.98
169.8
500
0.97
159.3
0.3
2.1
0.064
74.8
0.97
166.5
!
V
DS
= 28V, I
DQ
= 0.3A
#
MHZ
S MA R 50
Typical S Parameters
V
DS
= 28V
I
DQ
= 0.3A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
V
DS
= 28V
I
DQ
= 0.3A
f = 175MHz
D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
10k
10nF
10K
D1003UK
L1
10nF
5-57pF
5-57pF
5-57pF
5-57pF
22F
1F
1nF
L3
L2
T4
T1
T2
Gate-Bias
T3
+28V
7 x 7mm
contact pad
7 x 7 mm
contact pad
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W= 4.4mm
D1003UK 175MHz TEST FIXTURE
T1
8mm
T2
22mm
T3
18mm
T4
4.5mm
L1
Hairpin loop 16swg 15.5mm dia.
L2
Hairpin loop 16swg 10mm dia.
L3
11 turns 18swg enamelled copper wire, 10mm i. d.
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