D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
175W
70V
20V
20A
65 to 150C
200C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W 28V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 16 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.35 DIA
0.13
0.250 DIA
0.005
B
3.17 DIA
0.13
0.125 DIA
0.005
C
18.41
0.25
0.725
0.010
D
5.46
0.13
0.215
0.005
E
5.21
0.13
0.205
0.005
F
7.62
MAX
0.300
MAX
G
21.59
0.38
0.850
0.015
H
3.94
0.13
0.155
0.005
I
12.70
0.13
0.500
0.005
J
0.13
0.03
0.005
0.001
K
24.76
0.13
0.975
0.005
M
2.59
0.13
0.102
0.005
N
4.06
0.25
0.160
0.010
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
4
1
1
7
3.2
16
50
20:1
240
120
10
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 4A
P
O
= 80W
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 28V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.0C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
20
30
40
50
60
70
80
%
Efficiency
0
1
2
3
4
5
6
7
8
Pin W
Pout
Drain Efficiency
0
25
50
75
100
125
150
Pout
W
10
12
14
16
18
20
22
Gain
dB
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
0
25
50
75
100
125
150
Pout
W
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
10
-45
-40
-35
-30
-25
-20
IMD
dBc
20
30
40
50
60
70
80
90
Pout W PEP
IMD3
Figure 3 IMD vs. Output Power.
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
175MHz
2.2 + j1.9 3.2 - j0.5
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
I
DQ
= 0.4A
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
D1004K
10k
L1
10nF
10k
L3
22F
12
L4
5.1nF
5.1nF
L2
100nF
1-70pF
1-70pF
1-70pF
1-70pF
T3
+28V
T1
T2
Gate-Bias
8 x5 mm
contact pad
8 x5 mm
contact pad
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W=4.4mm
D1004UK 175MHz TEST FIXTURE
T1
7.5mm
T2
6mm
T3
8mm
L1
Hairpin loop 16swg 13mm dia
L2
Hairpin loop 16swg 11mm dia
L3
10 turns 18swg enamelled copper wire, 4mm i.d.
L4
12 turns 18swg enamelled copper wire on 22.7mm
o.d. ferrite core
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