D1005UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
146W
70V
20V
20A
65 to 150C
200C
MECHANICAL DATA
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W 28V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 16 dB MINIMUM
DM
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
24.76
0.13
0.975
0.005
B
18.42
0.13
0.725
0.005
C
45
5
45
5
D
6.35
0.13
0.25
0.005
E
3.17 Dia.
0.13
0.125 Dia.
0.005
F
5.71
0.13
0.225
0.005
G
12.7 Dia.
0.13
0.500 Dia.
0.005
H
6.60
REF
0.260
REF
I
0.13
0.02
0.005
0.001
J
4.32
0.13
0.170
0.005
K
3.17
0.13
0.125
0.005
M
26.16
0.25
1.03
0.010
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D1005UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
2
1
1
7
3.2
16
50
20:1
240
100
10
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 4A
P
O
= 80W
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 0
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.2C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
D1005UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
5
6
7
8
9
Pin W
Pout
Drain Efficiency
20
30
40
50
60
70
80
90
Drain Efficiency
%
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
5
6
7
8
9
Pin W
Pout
Gain
11
12
13
14
15
16
17
18
11
12
13
14
15
16
17
18
Gain
dB
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
-50
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
0
20
40
60
80
100
120
Pout W PEP
Idq = 0.4A
Figure 3 IMD vs. Output Power.
D1005UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
175MHz
3 + j1
3 - j2.5
!Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag
ang
50
0.95
-58
4.29
94
0.006
34
0.66
-162
100
0.94
-79
3.32
81
0.006
57
0.75
-164
150
0.94
-104
2.26
65
0.01
98
0.84
-169
200
0.93
-124
1.59
53
0.019
107
0.88
-175
250
0.94
-140
1.2
41
0.031
103
0.92
-180
300
0.95
-152
0.94
34
0.042
102
0.93
176
350
0.96
-161
0.72
22
0.052
92
0.96
170
400
0.96
-169
0.59
19
0.064
91
0.98
164
450
0.97
-177
0.46
11
0.073
84
1.00
159
500
0.98
177
0.35
-2
0.091
82
1.00
154
!
V
DS
= 28V, I
DQ
= 0.3A
#
MHZ
S MA R 50
Typical S Parameters
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
I
DQ
= 0.4A
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
D1005UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
10k
10nF
10k
L1
10nF
5-57pF
5-57pF
5-57pF
5-57pF
22F
1F
1nF
L3
L2
D1005UK
T4
T1
T2
Gate-Bias
T3
+28V
7 x 7mm
contact pad
7 x 7 mm
contact pad
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W= 4.4mm
D1005UK 175MHz TEST FIXTURE
T1
8mm
T2
22mm
T3
18mm
T4
4.5mm
L1
Hairpin loop 16swg 15.5mm dia
L2
Hairpin loop 16swg 10mm dia
L3
11 turns 18swg enamelled copper wire, 10mm i.d.
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