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Электронный компонент: D1006UK

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D1006UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
220W
70V
20V
30A
65 to 150C
200C
MECHANICAL DATA
A
B
C
E
F
G
H
J
D
1
5
6
4
3
2
Q
P
O
N
K
M
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W 28V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 14 dB MINIMUM
DV
PIN 1
SOURCE
PIN 3
SOURCE
PIN 5
GATE
PIN 2
DRAIN
PIN 4
SOURCE
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
9.09
0.13
0.358
0.005
B
19.3
0.13
0.760
0.005
C
45
5
45
5
D
5.71
0.13
0.225
0.005
E
1.65R
0.13
0.065R
0.005
F
9.78
0.13
0.385
0.005
G
20.32
0.25
0.800
0.010
H
19.30
0.13
0.760
0.005
J
1.52R
0.13
0.060R
0.005
K
10.77
0.13
0.424
0.005
M
22.86
0.13
0.900
0.005
N
3.17
0.13
0.125
0.005
O
0.13
0.02
0.005
0.001
P
4.19
0.13
0.165
0.005
Q
6.35
REF
0.250
REF
D1006UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 6A
P
O
= 120W
V
DS
= 28V
I
DQ
= 1.2A
f = 175MHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
m
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
70
6
1
1
7
4.8
14
50
20:1
360
180
15
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 0.8C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
2%
D1006UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
3LQ:
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9GV 9
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Figure 2.
Power Output and Gain vs. Input Power
Figure 1.
Power Output and Efficiency vs.Input Power
Figure 3.
IMD vs Output Power
D1006UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
W
W
175
0.5 - j0.6
1.7 - j0.1
D1006UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1 5
1 . 5 K
1 0 u F
4 0 - 2 0 0 p F
4 0 - 2 0 0 p F
1 0 0 K
1 K
1 0 K
1 0 n F
D 1 0 0 6 K
4 7 p F
1 6 - 1 0 0 p F
3 5 p F
4 7 p F
1 6 - 1 0 0 p F
1 0 n F
1 n F
1 0 0 n F
L 1
L 2
T 1
+ 2 8 V
G a t e - B i a s
6 x 6
m m
c o n t a c t
p a d
T 2
6 x 6
m m
c o n t a c t
p a d
T 3
T 4
175 MHz Test Fixture
Substrate 1.6mm PTFE/glass, Er = 2.5
All microstrip lines W = 5mm
T1
10mm
T2
23.5mm
T3
25mm
T4
6mm
L1
9 turns 20swg encamelled copper wire, 6mm i.d.
L2
11 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite
core