D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage *
BV
GSS
Gate Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
175W
70V
20V
10A
65 to 150C
200C
MECHANICAL DATA
F
A
C
B
(2 pls)
K
2
3
E
1
G (4 pls)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W 28V 500MHz
PUSHPULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 13 dB MINIMUM
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.45
0.13
0.254
0.005
B
1.65R
0.13
0.065R
0.005
C
45
5
45
5
D
16.51
0.76
0.650
0.03
E
6.47
0.13
0.255
0.005
F
18.41
0.13
0.725
0.005
G
1.52
0.13
0.060
0.005
H
4.82
0.25
0.190
0.010
I
24.76
0.13
0.975
0.005
J
1.52
0.13
0.060
0.005
K
0.81R
0.13
0.032R
0.005
M
0.13
0.02
0.005
0.001
N
2.16
0.13
0.085
0.005
* Per Side
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
2
1
1
7
1.6
13
50
20:1
120
60
5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 2A
P
O
= 80W
V
DS
= 28V
I
DQ
= 0.4A
f = 400MHz
V
DS
= 28V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.0C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
TOTAL DEVICE
PER SIDE
PER SIDE
D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
4
8
12
16
20
Pin W
0
25
50
75
100
125
Pout
W
0
20
40
60
80
100
Drain
Efficiency
%
Pout
Drain Efficiency
0
4
8
12
16
20
Pin W
0
25
50
75
100
125
Pout
W
7
9
11
13
15
17
Gain
dB
Pout
Gain
-50
-45
-40
-35
-30
-25
-20
-15
IMD3
dBc
0
20
40
80
Pout W PEP
60
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
Figure 3 IMD vs. Output Power.
D1008UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
400
1.5 + j0.2 5.0 + j2.0
f
1
= 400.0MHz
f
2
= 400.1MHz
V
DS
= 28V
I
DQ
= 0.8A
f
1
= 400.0MHz
I
dq
= 0.4A
V
DS
= 28V
f
1
= 400MHz
I
dq
= 0.4A
V
DS
= 28V
!Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag
ang
100
0.794
-158
14.622
69
0.0115
-7
0.61
-145
200
0.881
-167
5.821
42
0.0061
3
0.794
-156
300
0.923
-171
3.02
28
0.0068
60
0.871
-162
400
0.923
-176
1.82
18
0.117
77
0.902
-167
500
0.937
-179
1.439
15
0.0168
76
0.923
-169
600
0.952
177
1.057
13
0.0234
75
0.945
-171
700
0.966
174
0.676
10
0.0285
74
0.966
-174
800
0.966
171
0.543
5
0.0335
69
0.955
-177
900
0.977
167
0.447
1
0.0394
64
0.966
178
1000
0.966
165
0.359
1
0.0432
64
0.955
178
!
Vds=28V, Idq=1A
#
MHz
S MA R 50
Typical S Parameters
D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
D1008
D1008
T4
L1
T6
2-18pF
1nF
6.8K
100K
100pF
T2
T3
L2
L4
6.8K
10
1nF
100pF
100pF
1-3.5pF
1nF
L3
T5
T1
INPUT
6 x 3.5mm
contact pad
GATE BIAS
6 x 3.5mm
contact pad
6 x 3.5mm
contact pad
6 x 3.5mm
contact pad
+28V
100uF
100pF
OUTPUT
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
D1008UK TEST FIXTURE
T1
70mm
50
UT34 SEMI RIGID COAX
T2,T3 85mm
25
UT70-25 SEMI RIGID COAX
T4,T5 100mm 15
UT85-15 SEMI RIGID COAX
T6
70mm
50
UT85 SEMI RIGID COAX
L1
3.5 turns of 24swg ECW, 3mm ID
L2
5.5 turns of 24swg ECW, 4mm ID
L3
4 turns of 21swg ECW, 7mm ID
L4
3 turns of 21swg ECW on Fair-Rite FT50-75 core
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