D1207UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage *
BV
GSS
Gate Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
175W
40V
20V
10A
65 to 150C
200C
MECHANICAL DATA
C
A
O
N
M
K
J
I
H
G
F
E
D
B
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W 12.5V 1GHz
PUSHPULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
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SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
16.38
0.26
0.645
0.010
B
1.52
0.13
0.060
0.005
C
45
5
45
5
D
6.35
0.13
0.250
0.005
E
3.30
0.13
0.130
0.005
F
14.22
0.13
0.560
0.005
G
1.27 x 45
0.13
0.05 x 45
0.005
H
1.52
0.13
0.060
0.005
I
6.35
0.13
0.250
0.005
J
0.13
0.02
0.005
0.001
K
2.16
0.13
0.085
0.005
M
1.52
0.13
0.060
0.005
N
5.08
MAX
0.200
MAX
O
18.90
0.13
0.744
0.005
DQ
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
* Per Side
D1207UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
40
1
1
1
7
0.8
10
50
20:1
60
40
4
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 1A
P
O
= 20W
V
DS
= 12.5V
I
DQ
= 0.8A
f = 400MHz
V
DS
= 0
V
GS
= 5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.75C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
VSWR
C
iss
C
oss
C
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