DIM
mm
Tol.
Inches
Tol.
A
6.47
0.08
.255
.003
B
0.76
0.08
.030
.003
C
45
5
45
5
D
0.76
0.08
.030
.003
E
1.14
0.08
.045
.003
F
2.67
0.08
.105
.003
G
11.73
0.13
.462
.005
H
8.43
0.08
.332
.003
I
7.92
0.08
.312
.003
J
0.20
0.02
.008
.001
K
0.64
0.02
.025
.001
L
0.30
0.02
.012
.001
M
3.25
0.08
.128
.003
N
2.11
0.08
.083
.003
O
6.35SQ
0.08
.250SQ
.003
P
1.65
0.51
.065
.020
Q
0.13
max
.005
max
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
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Website:
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P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
58W
40V
20V
20A
65 to 150C
200C
MECHANICAL DATA
A
F
E
B
D
C
G
H
I
P
M
N
O
J
K
L
1
2
3
4
5
6
7
8
Q
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W 7.2V 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
LOW NOISE
HIGH GAIN 10 dB MINIMUM
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DBC1 Package
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 2A
P
O
= 6W
V
DS
= 7.2V
I
DQ
= 0.5A
f = 500MHz
V
DS
= 0
V
GS
= 5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
40
1
1
0.5
7
1.6
10
50
20:1
120
80
8
R
THjcase
Thermal Resistance Junction Case
Max. 3C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
Figure 3 IMD vs. Output Power.
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
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Website:
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0
20
40
60
80
100
Drain Efficiency
%
0
0.5
1
1.5
2
2.5
Pin W
Pout
Drain Efficiency
0
2
4
6
8
10
Pout
W
f = 500MHz
Idq = 0.5A
Vds = 7.2V
0
2
4
6
8
10
Pout
W
0
0.5
1
1.5
2
2.5
Pin W
f = 500MHz
Idq = 0.5A
Vds = 7.2V
6
7
8
9
10
11
6
7
8
9
10
11
Gain
dB
Pout
Gain
f1 = 500.0 MHz
f2 = 500.1 MHz
Vds = 7.2V
Idq = 0.5A
-45
-40
-35
-30
-25
-20
-15
IMD3
dBc
0
2
4
6
8
10
Pout W PEP
Figure 1 Power Output and Efficiency
vs. Power Input.
Figure 2 Power Output & Gain
vs. Power Input.
D1213UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z
S
Z
L
MHz
500
2.3 - j0.4 2.1 - j1.9
!Freq
S11
S21
S12
S22
MHz
mag
ang
mag
ang
mag
ang
mag
ang
70
0.69
-147
6.8
68
0.021
-1
0.77
-160
100
0.74
-153
4.5
59
0.017
10
0.79
-163
150
0.82
-161
2.5
47
0.015
50
0.84
-167
200
0.86
-167
1.6
42
0.024
78
0.87
-169
250
0.89
-172
1.2
35
0.037
83
0.89
-171
300
0.90
-176
1.0
33
0.052
87
0.90
-173
350
0.91
-179
0.7
27
0.064
82
0.91
-175
400
0.92
178
0.6
26
0.082
82
0.92
-177
450
0.93
174
0.5
23
0.095
80
0.93
-178
500
0.93
171
0.5
21
0.116
77
0.93
-179
550
0.93
168
0.4
20
0.130
73
0.94
180
600
0.93
164
0.4
15
0.148
66
0.94
178
650
0.93
162
0.3
18
0.159
66
0.95
177
700
0.92
158
0.3
16
0.173
60
0.94
177
750
0.92
155
0.3
21
0.182
58
0.95
176
800
0.91
153
0.3
23
0.189
56
0.96
175
850
0.92
151
0.3
29
0.207
59
0.96
173
900
0.94
148
0.3
29
0.235
59
0.95
171
950
0.95
144
0.3
31
0.275
56
0.93
170
1000
0.93
140
0.4
29
0.308
52
0.92
168
!
V
DS
= 7.2V
I
DQ
= 0.2A
# MHZ S MA R 50
Typical S Parameters
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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