D1260UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
175W
40V
20V
40A
65 to 150C
200C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W 12.5V 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 10 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.35 DIA
0.13
0.250 DIA
0.005
B
3.17 DIA
0.13
0.125 DIA
0.005
C
18.41
0.25
0.725
0.010
D
5.46
0.13
0.215
0.005
E
5.21
0.13
0.205
0.005
F
7.62
MAX
0.300
MAX
G
21.59
0.38
0.850
0.015
H
3.94
0.13
0.155
0.005
I
12.70
0.13
0.500
0.005
J
0.13
0.03
0.005
0.001
K
24.76
0.13
0.975
0.005
M
2.59
0.13
0.102
0.005
N
4.06
0.25
0.160
0.010
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D1260UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
40
4
1
0.5
7
3.2
10
50
20:1
240
180
16
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 4A
P
O
= 60W
V
DS
= 12.5V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 0
V
GS
= 5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 1.0C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
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