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Электронный компонент: D2021

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D2021UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
17.5W
65V
20V
3A
65 to 150C
200C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
7.5W 28V 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 10 dB MINIMUM
SO8 PACKAGE
PIN 1 SOURCE
PIN 2 DRAIN
PIN 3 DRAIN
PIN 4 SOURCE
PIN 5 SOURCE
PIN 6 GATE
PIN 7 GATE
PIN 8 SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
Tol.
Inches
Tol.
4.06
0.08
0.160
0.003
5.08
0.08
0.200
0.003
1.27
0.08
0.050
0.003
0.51
0.08
0.020
0.003
3.56
0.08
0.140
0.003
4.06
0.08
0.160
0.003
1.65
0.08
0.065
0.003
+0.25
+0.010
0.76
0.030
-0.00
-0.000
0.51
Min.
0.020
Min.
1.02
Max.
0.040
Max.
45
Max.
45
Max.
0
Min.
0
Min.
7
Max.
7
Max.
0.20
0.08
0.008
0.003
2.18
Max.
0.086
Max.
4.57
0.08
0.180
0.003
METAL GATE RF SILICON FET
TetraFET
D2021UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.6A
P
O
= 7.5W
V
DS
= 28V
I
DQ
=0.3A
f = 1GHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
DS
= 28V
V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
65
3
1
0.5
7
0.54
13
40
20:1
36
18
1.5
R
THjcase
Thermal Resistance Junction Case
Max. 5C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%