D2083UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
DrainSource Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage
g
m
*
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS(th)match
Gate Threshold Matching Voltage
Between Sides
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V
I = 2A
T = 300
S
V
DS
= 0V
V
GS
= -5V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
V
mA
A
V
mhos
pF
pF
pF
V
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
P
O
= 80W
f = 1GHz
V = 28V
I
DQ
= 2A
Thermal Resistance = 0.72 C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
65
3
1
1
7
2.5
128
51
2.7
0.1
PER SIDE
TOTAL DEVICE
DIM
mm
Tol.
Inches
Tol.
A
13.97
0.26
0.550
0.010
B
5.72
0.13
0.225
0.005
C
45
5
45
5
D
9.78
0.13
0.385
0.005
E
1.65R
0.13
0.065R
0.005
F
23.75
0.13
0.935
0.005
G
1.52R
0.13
0.060R
0.005
H
30.48
0.13
1.200
0.005
I
19.17
0.26
0.755
0.010
J
0.13
0.02
0.005
0.001
K
2.54
0.13
0.100
0.005
M
1.52
0.13
0.060
0.005
N
5.08
0.50
0.200
0.020
MECHANICAL DATA
A
M
K
J
I
H
G
(typ)
F
E
D
C
B
(4 pls)
N
1
5
4
3
2
TetraFET
80W 28V 1.0GHz
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
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