D2225UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
17.5W
40V
20V
4A
65 to 150C
200C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W 12.5V 1GHz
PUSHPULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 10 dB MINIMUM
SO8 PACKAGE
PIN 1 SOURCE
PIN 2 DRAIN 1
PIN 3 DRAIN 2
PIN 4 SOURCE
PIN 5 SOURCE
PIN 6 GATE 2
PIN 7 GATE 1
PIN 8 SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
Tol.
Inches
Tol.
4.06
0.08
0.160
0.003
5.08
0.08
0.200
0.003
1.27
0.08
0.050
0.003
0.51
0.08
0.020
0.003
3.56
0.08
0.140
0.003
4.06
0.08
0.160
0.003
1.65
0.08
0.065
0.003
+0.25
+0.010
0.76
0.030
-0.00
-0.000
0.51
Min.
0.020
Min.
1.02
Max.
0.040
Max.
45
Max.
45
Max.
0
Min.
0
Min.
7
Max.
7
Max.
0.20
0.08
0.008
0.003
2.18
Max.
0.086
Max.
4.57
0.08
0.180
0.003
METAL GATE RF SILICON FET
TetraFET
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DrainSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
VSWR
C
iss
C
oss
C
rss
D2225UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
P
O
= 5W
V
DS
= 12.5V
I
DQ
= 0.2A
f = 1GHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
40
1
1
0.5
7
0.18
10
40
20:1
12
10
1
R
THjcase
Thermal Resistance Junction Case
Max. 6C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
PER SIDE
TOTAL DEVICE
PER SIDE
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