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Электронный компонент: D2282UK

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LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
D2282UK
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
2W
40V
20V
400mA
65 to 125C
150C
MECHANICAL DATA
Dimensions in mm.
6 .7
6 .3
3 .1
2 .9
3 .7
3 .3
7 .3
6 .7
4 .6 0
2 .3 0
1 .0 5
0 .8 5
0 .8 0
0 .6 0
1
2
3
4
1 3
0 .1 0
0 .0 2
0 .3 2
0 .2 4
1 6
m ax.
1 .7 0
m ax.
1 0
m ax.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW 6V 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE (Typical < 2dB NF)
HIGH GAIN 8dB MINIMUM
SURFACE MOUNT
SOT223
PIN 1
GATE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
METAL GATE RF SILICON FET
TetraFET
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
D2282UK
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
40
1
1
1
5
0.18
8
40
10:1
12
10
1
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
P
O
= 750mW
V
DS
= 6V
I
DQ
= 75mA
f = 1GHz
V
DS
= 0V
V
GS
= 5V
f = 1MHz
V
DS
= 12.5V
V
GS
= 0
f = 1MHz
V
DS
= 12.5V
V
GS
= 0
f = 1MHz
V
mA
A
V
mhos
dB
%
--
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
THjcase
Thermal Resistance Junction Case
Max. 70C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
VSWR
C
iss
C
oss
C
rss