D2290UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Document Number 3890
Issue 3
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
I
D(sat)
Drain Current
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
1W
40V
20V
2A
65 to 125C
150C
MECHANICAL DATA
Top View
D
C
4
3
1
2
A
I
B
G
H
E
J
K
L
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W 12.5V 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 10 dB MINIMUM
SOT143 PACKAGE
PIN 1 DRAIN
PIN 2 SOURCE
PIN 3 GATE
PIN 4 SOURCE
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
PLQ
PD[
PLQ
PD[
$
%
&
'
(
)
*
+
,
-
.
/
'LP
5()
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%6&
5()
PP
,QFKHV
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D2290UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Document Number 3890
Issue 3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DrainSource
BV
DSS
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current
I
GSS
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 0.2A
P
O
= 1W
V
DS
= 12.5V
I
DQ
= 50mA
f = 1GHz
V
DS
= 0V
V
GS
= 5V f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
DS
= 12.5V V
GS
= 0
f = 1MHz
V
mA
A
V
S
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
40
1
1
0.5
7
0.18
10
40
20:1
12
10
1
R
THjcase
Thermal Resistance Junction Case
Max. 175 C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
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