DIM
Millimetres
Tol.
Inches
Tol.
A
19.05
0.50
0.75
0.020
B
10.77
0.13
0.424
0.005
C
45
5
45
5
D
9.78
0.13
0.385
0.005
E
5.71
0.13
0.225
0.005
F
27.94
0.13
1.100
0.005
G
1.52R
0.13
0.060R
0.005
H
10.16
0.13
0.400
0.005
I
22.22
MAX
0.875
MAX
J
0.13
0.02
0.005
0.001
K
2.72
0.13
0.107
0.005
M
1.70
0.13
0.067
0.005
N
5.08
0.50
0.200
0.020
O
34.03
0.13
1.340
0.005
P
1.61R
0.08
0.064R
0.003
D5029UK
Document Number 4149
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
Power Dissipation
BV
DSS
Drain Source Breakdown Voltage*
BV
GSS
Gate Source Breakdown Voltage*
I
D(sat)
Drain Current*
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
438W
125V
20V
21A
65 to 150C
200C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
350W 50V 175MHz
PUSHPULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN 13 dB MINIMUM
DR
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
D5029UK
Document Number 4149
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
125
7
1
1
7
5.6
0.1
13
50
20:1
420
175
10.5
V
GS
= 0
I
D
= 100mA
V
DS
= 50V
V
GS
= 0
V
GS
= 20V
V
DS
= 0
I
D
= 10mA
V
DS
= V
GS
V
DS
= 10V
I
D
= 3A
I
D
= 10mA
V
DS
= V
GS
P
O
= 350W
V
DS
= 50V
I
DQ
= 1.4A
f = 175MHz
V
DS
= 50V
V
GS
= 5V f = 1MHz
V
DS
= 50V
V
GS
= 0
f = 1MHz
V
DS
= 50V
V
GS
= 0
f = 1MHz
V
mA
A
V
mhos
V
dB
%
--
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DrainSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THjcase
Thermal Resistance Junction Case
Max. 0.4C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
s , Duty Cycle
2%
TOTAL DEVICE
PER SIDE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
VSWR
C
iss
C
oss
C
rss
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