Prelim. 4/94
LAB
SEME
HCT700
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Continuous Collector Current
P
D
Power Dissipation @ T
amb
= 25C
P
D
Power Dissipation @ T
substrate
= 25C
Derate above 25C
NPN to PNP Isolation Voltage
T
J
, T
stg
Operating and Storage Temperature Range
T
L
Soldering temperature
(Vapour phase reflow for 30 sec)
T
L
Soldering temperature
(Heated collet for 5 sec)
NPN
PNP
75
60
50
60
6.0
5.0
800mA
600mA
0.4W
2.0W
11.4mW / C
500V
65 to +200C
215C
260C
MECHANICAL DATA
Dimensions in mm (inches)
A
2
1
3
4
5
6
6.22 0.13
(0.245 0.005)
2
.
54
0.
13
(
0
.
10 0.
005)
1.65 0.13
(0.065 0.005)
2.29 0.20
(0.09 0.008)
1.27 0.13
(0.05 0.005)
1.40 0.15
(0.055 0.006)
4.
32
0.
13
(
0
.
170
0.
005)
0
.
64 0.
08
(
0
.
025 0.
003)
0.23
(0.009)
rad.
A =
COMPLEMENTARY
SWITCHING TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT
PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
FEATURES
SILICON PLANAR EPITAXIAL NPN /PNP
TRANSISTORS
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
DESCRIPTION
Hermetically sealed surface mount complementary
transistor pair.
The HCT700 transistor die have similar electrical
characteristics to the 2N2222A on the NPN side and
the 2N2907A on the PNP side.
The HCT700 is ideal for high reliability and space
applications requiring small size and low weight
devices.
LCC2 Ceramic Surface Mount Package
Pi n 6
EM I T T ER
Pin 2
B AS E
Pin 3
B AS E
Pin 5
E MI T T ER
Pi n 1
CO L L ECT OR
Pi n 4
CO L L ECT OR
Prelim. 4/94
LAB
SEME
HCT700
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN
PNP
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
I
C
= 10
m
A
I
E
= 0
I
C
= 10mA
I
B
= 0
I
E
= 10
m
A
I
C
= 0
I
E
= 0
V
CB
= 60V
T
amb
= 25C
V
CB
= 50V
I
E
= 0
V
CB
= 60V
T
amb
= 150C
V
CB
= 50V
I
C
= 0
V
EB
= 4V
T
amb
= 25C
V
EB
= 3.5V
V
CE
= 50V
V
CE
= 10V
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
1
V
CE
= 10V
I
C
= 500mA
1
V
CE
= 10V
I
C
= 10mA
T
amb
= 55C
I
C
= 1mA
I
C
= 150mA
I
B
= 15mA
1
I
C
= 500mA
I
B
= 50mA
1
I
C
= 150mA
I
B
= 15mA
1
I
C
= 500mA
I
B
= 50mA
1
V
CE
= 10V
I
C
= 1mA
f = 1kHz
V
CE
= 20V
I
C
= 20mA
f = 100MHz
I
C
= 50mA
V
CE
= 10V f = 100kHz to 1MHz
V
EB
= 2V f = 100kHz to 1MHz
V
EB
= 0.5V f = 100kHz to 1MHz
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 30V
I
C
= 150mA
I
B1
= I
B2
= 15mA
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Base
Cut-off Current
Emitter Base Cut-off Current
Collector Emitter Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Small Signal Current Gain
Small Signal Current Gain
Output Capacitance
Input Capacitance
Turn On Time
Turn Off Time
75
60
50
60
6.0
5.0
10
10
10
10
10
50
1.0
50
75
75
325
100
450
100
100
100
300
100
300
30
50
35
50
0.30
0.40
1.00
1.60
0.60
1.20
1.30
2.00
2.60
50
100
2.5
2.0
8.0
8.0
25
30
35
45
300
300
V
V
V
nA
m
A
nA
m
A
--
V
V
--
--
pF
pF
ns
ns
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
h
FE
V
CE(SAT
V
BE(SAT)
h
fe
h
fe
C
obo
C
ibo
t
on
t
off
On Characteristics
Off Characteristics
Small Signal Characteristics
Small Signal Characteristics
1 Pulse Test: Pulse Width
300ms,
d
2%
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