IRF044
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
39.95 (1.573)
max.
17.15 (0.675)
16.64 (0.655)
30.40 (1.197)
30.15 (1.187)
26.67 (1.050)
max.
11.18 (0.440)
10.67 (0.420)
1
2
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
20.32 (0.800)
18.80 (0.740)
dia.
7.87 (0.310)
6.99 (0.275)
12.07 (0.475)
11.30 (0.445)
1.78 (0.070)
1.52 (0.060)
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 0 , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 0 , T
case
= 100C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
T
L
Lead Temperature 1.6mm (0.63") from case for 10 sec.
20V
44A
27A
176A
125W
1.0W/C
340mJ
4.5V/ns
55 to 150C
300C
MECHANICAL DATA
Dimensions in mm (inches)
NCHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
FEATURES
HERMETICALLY SEALED TO3 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
SCREENING OPTIONS AVAILABLE
TO3 Metal Package
Pin 1 Gate
Pin 2 Source
Case Drain
Notes
1) Pulse Test: Pulse Width
300
s,
2%
2) @ V
DD
= 25V , L
200
H , R
G
= 25
, Peak I
L
= 44A , Starting T
J
= 25C
3) @ I
SD
44A , di/dt
250A/
s , V
DD
BV
DSS
, T
J
150C , Suggested R
G
= 9.1
V
DSS
60V
I
D(cont)
44A
R
DS(on)
0.028
IRF044
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
0.68
0.028
0.032
2
4
17
25
250
100
100
2400
1100
230
39
88
6.7
15
18
52
23
130
81
79
44
176
2.5
220
1.6
Negligible
5.0
13
1.0
0.12
30
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 27A
V
GS
= 10V
I
D
= 44A
V
DS
= V
GS
I
D
= 250mA
V
DS
15V
I
DS
= 27A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 44A
V
DS
= 0.5BV
DSS
V
DD
= 30V
I
D
= 44A
R
G
= 9.1
I
S
= 44A
T
J
= 25C
V
GS
= 0
I
F
= 44A
T
J
= 25C
d
i
/ d
t
100A/
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward TurnOn Time
V
V / C
V
S (
)
A
nA
pF
nC
ns
A
V
ns
C
nH
C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
JC
R
CS
R
JA
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300ms,
2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
Thermal Resistance Junction Case
Thermal Resistance Case Sink
Thermal Resistance Junction Ambient
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
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