SML100H11
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Gate Source Voltage Transient
Total Power Dissipation @ T
case
= 25C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
11
44
30
40
250
2.0
55 to 150
300
11
30
1300
V
A
A
V
W
W/C
C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25C, L = 21.49mH, R
G
= 25
, Peak I
L
= 11A
V
DSS
1000V
I
D(cont)
11A
R
DS(on)
0.880
Faster Switching
Lower Leakage
TO258 Hermetic Package
StarMOS is a new generation of high voltage
NChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
13.
8
4
(
0
.
545
)
13.
5
8
(
0
.
535
)
1
7
.
9
6 (
0
.
7
07)
1
7
.
7
0 (
0
.
6
97)
19.
05 (
0
.
750
)
12.
70 (
0
.
500
)
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
21
.
21 (
0
.
8
3
5
)
20
.
70 (
0
.
8
1
5
)
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO258 Package Outline.
Dimensions in mm (inches)
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
SML100H11
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic Test Conditions Min. Typ. Max. Unit
11
44
1.3
800
11
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
C
Characteristic Min. Typ. Max. Unit
0.50
40
R
JC
R
JA
Junction to Case
Junction to Ambient
C/W
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 1.6
pF
nC
ns
3700 4440
350 490
180 270
185 275
16 24
90 135
12 24
10 20
43 65
10 20
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
GS
= 0V , I
D
= 250
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
1000
25
250
100
2
4
11
0.880
V
A
nA
V
A
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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