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Электронный компонент: SML50B26F

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SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
80 (
0
.
8
1
9
)
21.
46 (
0
.
8
4
5
)
6.
15
(
0
.
242)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
1
77)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
B S C
2.87 (0.113)
3.12 (0.123)
TO247AD Package Outline.
Dimensions in mm (inches)
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Gate Source Voltage Transient
Total Power Dissipation @ T
case
= 25C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER FREDFET
500
26
104
20
30
300
2.4
55 to 150
300
26
30
1300
V
A
A
V
W
W/C
C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25C, L = 3.85mH, R
G
= 25
, Peak I
L
= 26A
V
DSS
500V
I
D(cont)
26A
R
DS(on)
0.200
Pin 1 Gate
Pin 2 Drain
Pin 3 Source
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO247 Package
Fast Recovery Body Diode
StarMOS is a new generation of high voltage
NChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
26
104
1.3
5
250
500
1.3
4.5
12
18
I
S
I
SM
V
SD
dv / dt
t
rr
Q
rr
I
rrm
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
I
D
[cont]
dI / dt = 100A/s
V
DD
V
DSS
V
R
= 200V
T
J
150C
R
G
= 2.0
I
S
= I
D
[Cont.]
T
J
= 25C
dI / dt = 100A/
s
T
J
= 125C
I
S
= I
D
[Cont.]
T
J
= 25C
dl / dt = 100A/
s
T
J
= 125C
I
S
= I
D
[Cont.]
T
J
= 25C
dl / dt = 100A/
s
T
J
= 125C
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery Current
A
V
V/ns
ns
C
A
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 1.8
pF
nC
ns
3700
4440
510
715
200
300
150
225
25
37
70
105
12
25
10
20
50
75
8
15
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
GS
= 0V , I
D
= 250
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
500
25
250
100
2
4
26
0.20
V
A
nA
V
A
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Characteristic
Min.
Typ.
Max. Unit
0.42
40
R
JC
R
JA
Junction to Case
Junction to Ambient
C/W
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.