SML10S75
5/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Gate Source Voltage Transient
Total Power Dissipation @ T
case
= 25C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
100
75
300
20
30
300
2.4
55 to 150
300
75
30
1500
V
A
A
V
W
W/C
C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25C, L = 0.53mH, R
G
= 25
W
, Peak I
L
= 75A
V
DSS
100V
I
D(cont)
75A
R
DS(on)
0.025
W
W
W
W
Faster Switching
Lower Leakage
100% Avalanche Tested
Surface Mount D
3
PAK Package
StarMOS is a new generation of high voltage
NChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
D
3
PAK Package Outline.
Dimensions in mm (inches)
15.95 (0.628)
16.05 (0.632)
1.04 (0.041)
1.15 (0.045)
4.98 (0.196)
5.08 (0.200)
1.47 (0.058)
1.57 (0.062)
5.45 (0.215) BSC
2 plcs.
2.67 (0.105)
2.84 (0.112)
1.27 (0.050)
1.40 (0.055)
13.41 (0.528)
13.51 (0.532)
13.79 (0.543)
13.99 (0.551)
1
3
2
0.46 (0.018)
0.56 (0.022)
3 plcs.
1.22 (0.048)
1.32 (0.052)
1.98 (0.078)
2.08 (0.082)
11.51 (0.453)
11.61 (0.457)
3.81 (0.150)
4.06 (0.160)
Pin 1 Gate
Pin 2 Drain
Pin 3 Source
Heatsink is Drain.
SML10S75
5/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
75
300
1.3
160
1.1
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
m
C
Characteristic
Min.
Typ.
Max. Unit
0.42
40
R
q
JC
R
q
JA
Junction to Case
Junction to Ambient
C/W
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 1.6
W
pF
nC
ns
4150
1650
630
155
25
80
13
22
43
9
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
GS
= 0V , I
D
= 250
m
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
100
250
1000
100
2
4
75
0.025
V
m
A
nA
V
A
W
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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