SML1001RHN
SML901RHN
0
Prelim. 7/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SML
Parameter
901RHN
1001RHN
Unit
Characteristic / Test Conditions / Part Number
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STJ
T
L
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
13.
8
4
(
0
.
545
)
13.
5
8
(
0
.
535
)
1
7
.
9
6 (
0
.
7
07)
1
7
.
7
0 (
0
.
6
97)
19.
05 (
0
.
750
)
12.
70 (
0
.
500
)
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
21
.
21 (
0
.
8
3
5
)
20
.
70 (
0
.
8
1
5
)
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO258 Package Outline.
Dimensions in mm (Inches)
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Total Power Dissipation @ T
case
= 25C
Derate above 25C
Operating and Storage Junction Temperature Range
Lead Tempeature (0.063" from Case for 10 Sec.)
SML1001RHN
SML901RHN
900
1000
10
40
30
250
2
55 to +150C
300
V
A
A
V
W
W/C
C
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
On State Drain Current
2
Gate Threshold Voltage
Static Drain Source On State Resistance
2
1000
900
250
1000
100
10
2
4
1.00
V
m
A
nA
A
V
W
MAXIMUM RATINGS
(T
case
=25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
=25C unless otherwise stated)
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4TH GENERATION MOSFET
D
G
S
V
GS
= 0V
I
D
= 250
m
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
T
C
= 125C
V
GS
= 30V
V
DS
= 0V
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
DS
= V
GS
I
D
= 1.0mA
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
SML1001RHN
SML901RHN
0
Prelim. 7/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Characteristic
Test Conditions.
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic / Test Conditions.
Part Number
Min.
Typ.
Max. Unit
10
40
1.3
320
636
1200
2.2
4.5
9
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V
I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.]
dl
s
/ dt = 100A/
m
s
A
A
V
ns
C
Characteristic / Test Conditions / Part Number
Min.
Typ.
Max. Unit
250
250
40
SOA1
SOA2
I
LM
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec
I
DS
= I
DS
[Cont.] , V
DS
= P
D
/ I
D
[Cont.] , t = 1 Sec
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
A
Characteristic / Test Conditions.
Min.
Typ.
Max. Unit
0.50
40
R
q
JC
Junction to Case
Junction to Ambient
C/W
C/W
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
(T
case
=25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
V
GS
= 15V
R
G
= 1.8
W
pF
nC
ns
2460
2950
360
500
105
160
90
130
9.3
14
47
70
15
30
16
32
64
95
24
48
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