SMLA42CSM
Prelim. 7/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
Derate Above 25C
T
j
Maximum Junction Temperature
T
stg
Storage Temperature Range
300V
300V
6V
500mA
350mW
2.0mW/C
200C
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SILICON NPN
HIGH VOLTAGE TRANSISTOR
IN CERAMIC SURFACE MOUNT
PACKAGE
FEATURES
HIGH BREAKDOWN VOLTAGE
LOW SATURATION VOLTAGES
LOW CAPACITANCE
HERMETIC CERAMIC SURFACE
MOUNT PACKAGE SOT23CSM
(SOT23 COMPATIBLE)
SOT23 CERAMIC
(LCC1 PACKAGE)
PAD 1 Base
Underside View
PAD 2 Collector
PAD 3 Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
SMLA42CSM
Prelim. 7/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100
m
A
I
E
= 0
I
C
= 1mA
I
B
= 0*
I
E
= 100
m
A
I
C
= 0
V
CB
= 200V
I
E
= 0
V
EB
= 6V
I
C
= 0
I
C
= 20mA
I
B
= 2mA
I
C
= 20mA
I
B
= 2mA
I
C
= 1mA
V
CE
= 10V*
I
C
= 10mA
V
CE
= 10V*
I
C
= 30mA
V
CE
= 10V*
I
C
= 10mA
V
CE
= 20V
f = 20MHz
V
CB
= 20V
I
E
= 0
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
Collector - Base
breakdown voltage
Collector - Emitter
breakdown voltage
Emitter - Base
breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
DC Current gain
Transition frequency
Output capacitance
300
300
6
0.1
0.1
0.5
0.9
25
40
40
50
6
V
V
V
m
A
m
A
V
V
--
MHz
pF
* Pulse test t
p
= 200
m
s ,
d
= 2%
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
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