SRF442
SRF443
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 5/98
DEVICE
SRF442
GATE
SOURCE
DRAIN
SRF443
DRAIN
SOURCE
GATE
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
, T
STG
T
L
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
0
.8
0
(
0
.8
1
9
)
2
1
.4
6
(
0
.8
4
5
)
6.
15
(0
.
2
4
2
)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
177)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
B S C
2.87 (0.113)
3.12 (0.123)
TO-247AD Package Outline.
Dimensions in mm (inches)
Drain Source Voltage
Drain Gate Voltage
Continuous Drain Current
Gate Source Voltage
Total Power Dissipation @ T
case
= 25C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
NCHANNEL
ENHANCEMENT MODE
200W 100V 13.56MHz
300
300
8
30
167
-55 to 150
300
V
A
V
W
C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
RF POWER MOSFET
FEATURES
Low Cost Common Source RF
Package.
Very High Breakdown for Improved
Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved
Reliability.
PIN
NO
1
2
3
Dimensions in Millimeters and (Inches)
NOTE:
The SRF442 and SRF443 comprise a symmetric pair of RF Power
Transistors and meet the same electrical specifications. The
device pin-outs are the mirror image of each other to allow ease of
use as a push-pull pair.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
SRF442
SRF443
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 5/98
20
22
65
dB
%
No Degradation in Output
Power
730
900
100
140
33
50
C
iss
C
oss
C
rss
Characteristic
Min.
Typ.
Max. Unit
0.75
R
JC
Junction to Case
C/W
THERMAL CHARACTERISTICS
1) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 100V
f = 1MHz
pF
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
g
fs
V
DS(ON)
V
GS
= 0V , I
D
= 250
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 200mA
V
DS
= 10V, I
D
= 5.5A
I
D
(ON)
= 6.5A V
GS
= 10V
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
On State Drain Voltage
1
300
250
1000
100
2
5
3.5
4.5
6
V
A
nA
V
S
V
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
G
ps
Common source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
f = 13.56MHz
I
DQ
= 50mA
V
DD
= 100V
Pout = 200W
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