Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2920
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2920J)
JANTX level (2N2920JX)
JANTXV level (2N2920JV)
JANS level (2N2920JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Matched Dual transistors
NPN silicon transistor
Features
Hermetically sealed TO-78 metal can
Also available in chip configuration
Chip geometry 0307
Reference document:
MIL-PRF-19500/355
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
Volts
Collector-Base Voltage
V
CBO
70
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
50
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
300 one section
600 both sections
1.71one section
3.43 both sections
mW
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 25
C
P
T
750 one section
1.5 both sections
4.286 one section
7.14 both sections
MW
W
mW/
C
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2920
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
60
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 70 Volts
V
CB
= 45 Volts
V
CB
= 45 Volts, T
A
= 150
C
10
2
2.5
A
nA
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 5 Volts
2
nA
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 6 Volts
V
EB
= 5 Volts
10
2
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE2-1
/h
FE2-2
I
C
= 10
A, V
CE
= 5 Volts
I
C
= 100
A, V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10
A, V
CE
= 5 Volts
T
A
= -55
C
I
C
= 100
A, V
CE
= 5 Volts
175
235
300
50
0.9
600
800
1,000
1.0
Base-Emitter Voltage differential
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
|V
BE1
-V
BE2
|
3
V
CE
= 5 Volts, I
C
= 10
A
V
CE
= 5 Volts, I
C
= 100
A
V
CE
= 5 Volts, I
C
= 1 mA
5
3
5
mVolts
Base-Emitter Voltage differential
at temperature
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
V
CE
= 5 Volts, I
C
= 100
A
T
A
= 25
C and -55C
T
A
= 25
C and +125C
0.8
1
mVolts
Base-Emitter Saturation Voltage
V
BEsat1
I
C
= 1 mA, I
B
= 100
A
0.5 1.0
Volts
Collector-Emitter Saturation
Voltage
V
CEsat1
I
C
= 1 mA, I
B
= 100
A
0.3
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE1
|
V
CE
= 5 Volts, I
C
= 500
A,
f = 20 MHz
3 20
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
150 600
Open Circuit Output Capacitance
C
OBO
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
5
pF
Noise Figure
NF
1
NF
2
NF
3
V
CE
= 5 Volts, I
C
= 10
A,
R
g
= 10 k
f = 100 Hz
f = 1 kHz
f = 10 kHz
5
3
3
dB
Short Circuit Input Impedance
h
ie
V
CB
=5V, I
C
=1mA, f =1kHz
3
30
k
Open Circuit Output Admittance
h
oe
V
CB
=5V, I
C
=1mA, f =1kHz
60
mhos
Open Circuit reverse Voltage Transfer
Ratio
h
re
V
CB
=5V, I
C
=100
A, f=1kHz
1x10
-3
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