Type 2N3737
Geometry TBD
Polarity NPN
Qual Level: Pending
Data Sheet No. 2N3737
Generic Part Number:
2N3737
REF: MIL-PRF-19500/395
Features:
General-purpose NPN silicon
switching transistor which oper-
ates over a wide temperature
range.
Housed in a
TO-46
case.
Also it will be available in chip
form using the TBD
chip geome-
try.
The Min and Max limits shown are
per
MIL-PRF-19500/395
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
40
V
Collector-Base Voltage
V
CBO
75
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current, Continuous
I
C
1.5
mA
Power, T
A
= +25
o
C
P
T
0.5
W
Power, T
C
= +25
o
C
P
T
1.9
W
Thermal Resistance
R
JC
0.088
o
C/mW
Operating Junction Temperature
T
J
-55 to +200
o
C
Storage Temperature
T
STG
-55 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-46
Data Sheet No. 2N3737
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
I
C
= 10 A
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Base Cutoff Current
V
CB
= 30 V
Emitter-Base Cutoff Current
V
EB
= 4.0 V
Collector-Emitter Cutoff Current
V
CE
= 30 V, V
EB
= 2.0 V
I
CEX1
---
200
nA
V
CB
= 30 V, V
EB
= 2.0 V, T
A
= +150
o
C
I
CEX2
---
250
A
---
I
EBO1
---
100
V
(BR)CEO
75
---
V
(BR)EBO
5.0
---
I
CBO1
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
40
---
250
nA
nA
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
h
FE1
30
---
---
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
h
FE2
40
---
---
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
h
FE3
40
140
---
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
h
FE4
20
80
---
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
h
FE5
20
---
---
I
C
= 500 mA, V
CE
= 1.0 V (pulsed), T
A
= +150
o
C
h
FE6
15
---
---
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
V
CE(sat)1
---
0.2
V dc
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
CE(sat)2
---
0.3
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)3
---
0.9
V dc
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
V
CE(sat)4
---
0.30
V dc
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
V
BE(sat)1
---
0.8
V dc
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)2
---
1.0
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)3
---
1.2
V dc
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
V
BE(sat)4
0.9
1.4
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Delay Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= 100 mA
Rise Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= 100 mA
Turn-off Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= I
B2
= 100 mA
---
80
ns
t
off
---
60
ns
t
r
---
40
t
d
pF
---
8.0
ns
pF
C
OBO
---
9.0
C
IBO
|h
FE
|
2.5
6.0
---
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