Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3737UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3737UBJ)
JANTX level (2N3737UBJX)
JANTXV level (2N3737UBJV)
JANS level (2N3737UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0806
Reference document:
MIL-PRF-19500/395
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
40
Volts
Collector-Base Voltage
V
CBO
75
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
1.5
A
Power Dissipation, T
A
= 25
C
Derate linearly above 37.5
C
P
T
0.5
3.07
W
mW/
C
Thermal Resistance
R
JA
325
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3737UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
40
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
V
CB
= 75 Volts
V
CB
= 30 Volts
10
250
A
nA
Collector-Emitter Cutoff Current
I
CEX1
I
CEX2
V
CE
= 30 Volts, V
EB
= 2 Volts
V
CE
= 30 Volts, V
EB
= 2 Volts,
T
A
= 150
C
200
250
nA
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 5 Volts
V
EB
= 4 Volts
10
100
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 150 mA, V
CE
= 1 Volts
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1 A, V
CE
= 1.5 Volts
I
C
= 1.5 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55
C
35
40
40
20
20
15
140
80
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
0.9
0.8
1.0
1.2
1.4
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
0.2
0.3
0.5
0.9
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 50 mA,
f = 100 MHz
2.5 6.0
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
9
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
80
pF
Switching Characteristics
Delay Time
Rise Time
t
d
t
r
V
BE
= 2 Volts, I
C
= 1 A,
I
B
= 100 mA
8
40
ns
Saturated Turn-Off Time
t
OFF
I
C
= 1 A, I
B1
=I
B2
=100 mA
60
ns
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