Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3866AUBJ)
JANTX level (2N3866AUBJX)
JANTXV level (2N3866AUBJV)
JANS level (2N3866AUBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose high frequency
VHF-UHF amplifier transistor
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1008
Reference document:
MIL-PRF-19500/398
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
30
Volts
Collector-Base Voltage
V
CBO
60
Volts
Emitter-Base Voltage
V
EBO
3.5
Volts
Collector Current, Continuous
I
C
400
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
0.5
2.86
W
mW/
C
Thermal Resistance
R
JA
325
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
A
60
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 5 mA
30
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100
A
3.5
Volts
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 28 Volts
20
A
Collector-Emitter Cutoff Current
I
CES1
I
CES2
V
CE
= 55 Volts
V
CE
= 55 Volts, T
A
= 150
C
100
2
A
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 360 mA, V
CE
= 5 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55
C
25
8
12
200
Collector-Emitter Saturation Voltage
V
CEsat1
I
C
= 100 mA, I
B
= 10 mA
1
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 15 Volts, I
C
= 50 mA,
f = 200 MHz
4 7.5
Open Circuit Output Capacitance
C
OBO
V
CB
= 28 Volts, I
E
= 0 mA,
3.5
pF
Collector Efficiency
1
2
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
45
40
%
Power Output
P
1out
P
1out
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
1.0
0.5
2
Watts
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