Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3996
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3996J)
JANTX level (2N3996JX)
JANTXV level (2N3996JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power switching
Power transistor
NPN silicon transistor
Features
Hermetically sealed TO-x metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/374
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
Volts
Collector-Base Voltage
V
CBO
100
Volts
Emitter-Base Voltage
V
EBO
8
Volts
Collector Current, Continuous
I
C
5
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
2
11.4
W
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 25
C
P
T
30
300
W
mW/
C
Thermal Resistance
R
JC
3.33
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3996
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A
100
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50 mA
80
Volts
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 60 Volts
10
A
Collector-Emitter Cutoff Current
I
CES1
I
CES1
V
CE
= 80 Volts
V
CE
= 80 Volts, T
A
= 150
C
200
50
nA
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 5 Volts
V
EB
= 8 Volts
200
10
nA
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 50 mA, V
CE
= 2 Volts
I
C
= 1 A, V
CE
= 2 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 2 Volts
T
A
= -55
C
30
40
15
10
120
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
0.6
1.2
1.6
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
0.25
2
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 1 A,
f = 10 MHz
3 12
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
150
pF
Switching Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Delay Time
t
d
100 ns
Rise Time
t
r
240 ns
Storage Time
t
s
1.4 s
Fall Time
t
f
300 ns
Saturated Turn-On Time
t
ON
300 ns
Saturated Turn-Off Time
t
OFF
1.5 s
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