Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4033UB
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N4033UBJ)
JANTX level (2N4033UBJX) and
JANTXV level (2N4033UBJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed switching
Low Power
PNP silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 6700
Reference document:
MIL-PRF-19500/512
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
Volts
Collector-Base Voltage
V
CBO
80
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
1
A
Power Dissipation, T
A
= 25
C
Derate linearly above 37.5
C
P
T
0.5
3.08
W
mW/
C
Thermal Resistance
R
JA
325
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N4033UB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 80 Volts
V
CB
= 60 Volts
V
CB
= 60 Volts, T
A
= 150
C
10
10
25
A
nA
A
Collector-Emitter Cutoff Current
I
CEX
V
CE
= 60 Volts, V
EB
= 2 Volts
25
nA
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
BE
= 5 Volts
V
BE
= 3 Volts
10
25
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 100
A, V
CE
= 5 Volts
I
C
= 100 mA, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 5 Volts
T
A
= -55
C
50
100
70
25
30
300
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.9
1.2
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
0.15
0.50
1.00
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 50 mA,
f = 100 MHz
1.5 6.0
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
20
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
80
pF
Switching Characteristics
Delay Time
Rise Time
t
d
t
r
I
C
= 500 mA, I
B
= 50 mA
15
25
ns
Storage Time
Fall Time
t
s
t
f
I
C
= 500 mA, I
B
= 50 mA
175
35
ns
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