Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4261
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N4261J)
JANTX level (2N4261JX)
JANTXV level (2N4261JV)
JANS level (2N4261JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
PNP silicon transistor
Features
Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0014
Reference document:
MIL-PRF-19500/511
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
15
Volts
Collector-Base Voltage
V
CBO
15
Volts
Emitter-Base Voltage
V
EBO
4.5
Volts
Collector Current, Continuous
I
C
30
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
200
1.14
mW
mW/
C
Thermal Resistance
R
JA
0.86
C/mW
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N4261
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
15
Volts
Collector-Base Cutoff Current
I
CBO
V
CB
= 15 Volts
10
A
Collector-Emitter Cutoff Current
I
CEX1
I
CEX2
I
CEX3
V
CE
= 10Volts, V
BE
= 0.4Volts
V
CE
= 10 Volts, V
BE
= 2 Volts
V
CE
= 10 Volts, V
BE
= 2 Volts,
T
A
= 150
C
50
5
5
nA
nA
A
Emitter-Base Cutoff Current
I
EBX
V
BE
= 2 Volts, V
CE
= 10 Volts
5
nA
Emitter-Base Cutoff Current
I
EBO
V
EB
= 4.5 Volts
10
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 1 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 30 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
T
A
= -55
C
25
30
20
15
150
Base-Emitter Voltage
V
BE1
V
BE2
V
CE
= 1 Volts, I
C
= 1 mA
V
CE
= 1 Volts, I
C
= 10 mA
0.8
1.0
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 1 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1 mA
0.15
0.35
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE1
|
|h
FE2
|
f = 100 MHz
V
CE
= 4 Volts, I
C
= 5 mA
V
CE
= 10 Volts, I
C
= 10 mA
15
20
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Collector Base time constant
r
b
'C
C1
r
b
'C
C2
V
CE
= 4 Volts, f = 31.8 MHz
I
C
= 5 mA
I
C
= 10 mA
60
50
ps
Switching Characteristics
Saturated Turn-On Time
t
ON
V
CC
= 17 Volts, I
C
= 10 mA
2.5
ns
Saturated Turn-Off Time
t
OFF
V
CC
= 17 Volts, I
C
= 10 mA
3.5
ns
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