Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4957
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N4957J)
JANTX level (2N4957JX)
JANTXV level (2N4957JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
VHF-UHF amplifier transistor
PNP silicon transistor
Features
Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0006
Reference document:
MIL-PRF-19500/426
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
30
Volts
Collector-Base Voltage
V
CBO
30
Volts
Emitter-Base Voltage
V
EBO
3
Volts
Collector Current, Continuous
I
C
30
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
200
1.14
mW
mW/
C
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N4957
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1 mA
30
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 20 Volts
V
CB
= 30 Volts
V
CB
= 20 Volts, T
A
= 150
C
100
100
100
nA
A
A
Emitter-Base Cutoff Current
I
EBO1
V
EB
= 3 Volts
100
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 0.5 mA, V
CE
= 10 Volts
I
C
= 2 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
T
A
= -55
C
15
20
30
10
165
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 2 mA,
f = 100 MHz
12 36
Common-Emitter small signal power
gain
G
PE
I
C
= 2 mA, V
CE
= 10 Volts,
f = 450 MHz
17 25
dB
Noise Figure
NF
V
CE
= 10 Volts, I
C
= 2 mA,
f = 450 MHz, R
L
= 50
3.5
dB
Collector Base time constant
r
b
'C
C
V
CB
= 10 Volts, I
E
= 2 mA,
f = 63.6 MHz
1 8
ps
Collector Base feedback capacitance
C
cb
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
0.8
pF
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