Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5109UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5109UBJ)
JANTX level (2N5109UBJX)
JANTXV level (2N5109UBJV)
JANS level (2N5109UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
VHF-UHF amplifier transistor
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1009
Reference document:
MIL-PRF-19500/453
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
20
Volts
Collector-Base Voltage
V
CBO
40
Volts
Emitter-Base Voltage
V
EBO
3
Volts
Collector Current, Continuous
I
C
400
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
1
5.71
W
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 25
C
P
T
2.9
16.6
W
mW/
C
Thermal Resistance
R
JA
175
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5109UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
A
40
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 5 mA
20
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 5 mA, R
BE
= 10
40
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100
A
3
Volts
Collector-Emitter Cutoff Current
I
CEO1
I
CEO2
V
CE
= 15 Volts
V
CE
= 15 Volts, T
A
= 175
C
20
5
A
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
I
C
= 50 mA, V
CE
= 15 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55
C
40
15
150
Collector-Emitter Saturation Voltage
V
CEsat
I
C
= 100 mA, I
B
= 10 mA
0.5
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE1
|
|h
FE2
|
|h
FE3
|
V
CE
= 15 Volts, f = 200 MHz,
I
C
= 25 mA
I
C
= 50 mA
I
C
= 100 mA
5
6
5
10.0
11.0
10.5
Open Circuit Output Capacitance
C
OBO
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
3.5
pF
Power Gain (narrow band) current
G
PE
V
CC
= 15 Volts, I
C
= 50 mA,
f = 200 MHz, P
in
= -10 dB
11
dB
Cross Modulation
cm
V
CC
= 15 Volts, I
C
= 50 mA,
54 dB output
-57
dB
Noise Figure
NF
V
CC
= 15 Volts, I
C
= 10 mA,
f = 200 MHz, P
in
= -10 dB
3.5
dB
Voltage Gain (wideband)
G
V
CC
= 15 Volts, I
C
= 50 mA,
50 MHz < f < 216 MHz,
P
in
= -10dB
11
dB
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