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Электронный компонент: 2N5237

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Type 2N5237
Geometry 3111
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N5237
Generic Part Number:
2N5237
REF: MIL-PRF-19500/394
Features:
Silicon power transistor for use in
high speed switching applications.
Housed in a
TO-39
case.
Also available in chip form using
the 3111 chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/394
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V
CEO
120 V
Collector-Base Voltage V
CBO
150 V
Emitter-Base Voltage V
EBO
10 V
Collector Current, Continuous I
C
10 A
Power Disipation T
A
= 25
o
C ambient 1.0 mW
Derate above 25
o
C 5.7 mW/
o
C
Power Disipation T
A
= 25
o
C ambient 5.0 Watt
Derate above 25
o
C 50 mW/
o
C
R
JC
0.020
o
C/mW
R
JA
0.175
o
C/mW
Operating Junction Temperature T
J
-65 to +200
o
C
Storage Temperature T
STG
-65 to +200
o
C
Thermal Impedance
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
P
T
TO-39
Data Sheet No. 2N5237
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 0.1 A, pulsed
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Emitter Cutoff Current
V
CE
= 110 V
I
CEO1
---
10
A
V
BE
= 0.5 V, V
CE
= 150 V
I
CEX
---
10
A
V
BE
= -0.5 V, V
CE
= 150 V, T
C
= +150oC
I
CEX2
---
100
A
Base-Emitter Cutoff Current
V
EB
= 5 V
I
EBO
---
0.1
A
Collector-Base Cutoff Current
V
CB
= 80 V
I
CBO
---
0.1
A
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
(BR)CBO
150
---
V
(BR)CEO
120
V
V
(BR)EBO
7.0
---
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 1 A, V
CE
= 5 V, pulsed
h
FE1
50
225
---
I
C
= 5 A, V
CE
= 5 V, pulsed
h
FE2
40
120
---
I
C
= 10 A, V
CE
= 5 V
h
FE3
10
---
---
I
C
= 5 A, V
CE
= 5 V, T
C
= -55
o
C
h
FE4
20
---
---
Base-Emitter Saturation Voltage
I
C
= 5 A, I
B
= 0.5 A, pulsed
V
BE(sat)1
---
1.5
V dc
I
C
= 10 A, I
B
= 1 A, pulsed
V
BE(sat)2
---
2.5
V dc
Collector-Emitter Saturation Voltage
I
C
= 5 A, I
B
= 0.5 A, pulsed
V
CE(sat)1
---
0.6
V dc
I
C
= 10 A, I
B
= 1 A, pulsed
V
CE(sat)2
---
2.5
V dc
Safe Operating Area, Continuous DC
T
C
= 25
o
C, t = 1.0 s
V
CE
= 40 V, I
C
= 0.22 A
V
CE
= 70 V, I
C
= 90 mA
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 0.2 A, f = 10 MHz
Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 50 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
h
fe
40
160
---
C
OBO
---
350
pF
---
|h
fe
|
1.5
7.5
Switching Time
Symbol
Min
Max
Unit
Delay Time
Per figure 4, MIL-PRF-19500/394C
Rise Time
Per figure 4, MIL-PRF-19500/394C
Storage Time
Per figure 4, MIL-PRF-19500/394C
Fall Time
Per figure 4, MIL-PRF-19500/394C
1.5
ns
t
f
---
50
ns
t
s
---
t
r
---
500
ns
ns
t
d
---
50