Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5237
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5237J)
JANTX level (2N5237JX)
JANTXV level (2N5237JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power, High voltage
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 3111
Reference document:
MIL-PRF-19500/394
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
120
Volts
Collector-Base Voltage
V
CBO
150
Volts
Emitter-Base Voltage
V
EBO
10
Volts
Collector Current, Continuous
I
C
10
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
1
5.7
W
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 100
C
P
T
5
50
W
mW/
C
Thermal Resistance
R
JA
R
JC
.175
.020
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5237
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100 mA
120
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
V
CB
= 150 Volts
V
CB
= 80 Volts,
10
100
A
nA
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 110 Volts
10
A
Collector-Emitter Cutoff Current
I
CEX1
I
CEX2
V
CE
= 110Volts, V
EB
= .5Volts
V
CE
= 110Volts, V
EB
= .5Volts,
T
A
= 150
C
10
100
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 7 Volts
V
EB
= 5 Volts
10
100
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 10 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
T
A
= -55
C
50
40
10
20
225
120
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 5 A, I
B
= 500 mA
I
C
= 10 A, I
B
= 1 A
1.5
2.5
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 5 A, I
B
= 500 mA
I
C
= 10 A, I
B
= 1 A
0.6
2.5
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 200 mA,
f = 10 MHz
1.5 7.5
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 5 Volts, I
C
= 50 mA,
f = 1 kHz
40 160
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
350
pF
Switching Characteristics
Delay Time
Rise Time
t
d
t
r
I
C
= 5 A, I
B
= 500 mA,
50
500
ns
Storage Time
Fall Time
t
s
t
f
I
C
= 5 A, I
B1
= -I
B2
= 500 mA
1.5
500
s
ns
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