Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5339
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5339J)
JANTX level (2N5339JX)
JANTXV level (2N5339JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/560
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
100
Volts
Collector-Base Voltage
V
CBO
100
Volts
Emitter-Base Voltage
V
EBO
6
Volts
Collector Current, Continuous
I
C
5
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
1
5.71
W
mW/
C
Thermal Resistance
R
JC
17.5
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5339
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50 mA
100
Volts
Collector-Base Cutoff Current
I
CBO
V
CB
= 100 Volts
10
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 100 Volts
100
A
Collector-Emitter Cutoff Current
I
CEX1
I
CEX2
V
CE
= 90Volts, V
BE
= 1.5Volts
V
CE
=90Volts, V
BE
= 1.5Volts,
T
A
= 150
C
10
10
A
mA
Emitter-Base Cutoff Current
I
EBO
V
EB
= 6 Volts
100
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 0.5 A, V
CE
= 2 Volts
I
C
= 2 A, V
CE
= 2 Volts
I
C
= 5 A, V
CE
= 2 Volts
I
C
= 2 A, V
CE
= 2 Volts
T
A
= -55
C
60
60
40
12
240
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 2 A, I
B
= 200 mA
I
C
= 5 A, I
B
= 500 mA
1.2
1.8
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 2 A, I
B
= 200 mA
I
C
= 5 A, I
B
= 500 mA
0.7
1.2
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 500 mA,
f = 10 MHz
3 15
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
250
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 2 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
1,000
pF
Switching Characteristics
Delay Time
Rise Time
t
d
t
r
I
C
= 2 A, I
B1
= 200 mA
100
100
ns
Storage Time
Fall Time
t
s
t
f
I
C
= 2 mA, I
B1
=I
B2
= 200 mA
2
200
s
ns
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