Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5664
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5664J)
JANTX level (2N5664JX)
JANTXV level (2N5664JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose high power switching
Power Transistor
NPN silicon transistor
Features
Hermetically sealed TO-66 metal can
Also available in chip configuration
Chip geometry 9221
Reference document:
MIL-PRF-19500/455
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
200
Volts
Collector-Base Voltage
V
CBO
250
Volts
Emitter-Base Voltage
V
EBO
6
Volts
Collector Current, Continuous
I
C
5
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
2.5
14.3
W
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 100
C
P
T
30
300
W
mW/
C
Thermal Resistance
R
JA
3.3
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5664
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 10
A, R
BE
= 100
250
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A
6
Volts
Collector-Base Cutoff Current
I
CBO1
V
CB
= 200 Volts
100
nA
Collector-Emitter Cutoff Current
I
CES1
I
CES1
V
CE
= 200 Volts
V
CE
= 200 Volts, T
A
= 150
C
200
100
nA
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 0.5 A, V
CE
= 2 Volts
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 3 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 5 Volts
T
A
= -55
C
40
40
15
5
15
120
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 3 A, I
B
= 300 mA
I
C
= 5 A, I
B
= 1 A
1.2
1.5
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 3 A, I
B
= 300 mA
I
C
= 5 A, I
B
= 1 A
0.4
1.0
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 500 mA,
f = 10 MHz
2 7
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
120
pF
Switching Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Turn-On Time
t
ON
I
C
= 1 A, V
CC
= 100 Volts
0.25
s
Turn-Off Time
t
OFF
I
C
= 1 A, V
CC
= 100 Volts
1.5
s
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