Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N6988
Silicon PNP Transistor
Data Sheet
Description
Complement to the 2N6990
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N6988J)
JANTX level (2N6988JX)
JANTXV level (2N6988JV)
JANS level (2N6988JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching
4 Transistor Array
PNP silicon transistor
Features
Hermetically sealed 14 Lead Flat Pack
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/558
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
Volts
Collector-Base Voltage
V
CBO
60
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
600
mA
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
0.4
2.286
W
mW/
C
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N6988
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
60
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
V
CB
= 60 Volts
V
CB
= 50 Volts
10
10
A
nA
Collector-Base Cutoff Current
I
CBO3
V
CB
= 50 Volts, T
A
= 150
C
10
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 5 Volts
V
EB
= 4 Volts
10
50
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
T
A
= -55
C
75
100
100
100
50
50
450
300
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
1.3
2.6
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
1.6
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
2
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
100
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 2 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
30
pF
Transistor to Transistor Resistance
|R
T-T
| |V
T-T
| = 500 Volts
10
10
Switching Characteristics
Saturated Turn-On Time
t
ON
45 ns
Saturated Turn-Off Time
t
OFF
300 ns
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