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Электронный компонент: 2013GB173-4D

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SKiiP 2013GB173-4DL
by SEMIKRON
030606
B 7
-
19
I. Power section
Absolute maximum ratings
T
s
= 25C unless otherwise specified
Symbol
Conditions
Values
Units
IGBT
V
CES
1700
V
V
CC
1)
Operating DC link voltage
1200
V
V
GES
20
V
I
C
T
s
= 25 (70) C
2000 (1500)
A
Inverse diode
I
F
= -I
C
T
s
= 25 (70) C
1500 (1120)
A
I
FSM
T
j
= 150 C, t
p
= 10ms; sin
17280
A
I
2
t (Diode) Diode, T
j
= 150 C, 10ms
1493
kA
2
s
T
j
, (T
stg
)
-40...+150 (125)
C
V
isol
rms, AC, 1min
4000
V
I
AC-terminal
per AC terminal, rms, T
s
=
70C, T
terminal
<115C
400
A
Characteristics
T
s
= 25C unless otherwise specified
Symbol
Conditions
min.
typ.
max.
Units
IGBT
V
CEsat
I
C
= 1200A, T
j
= 25 (125)C;
measured at terminal
-
1,9 (2,2)
2,4
V
V
CEO
T
j
= 25 (125) C; at terminal
-
1,0 (0,9) 1,2 (1,1)
V
r
CE
T
j
= 25 (125) C; at terminal
-
0,8 (1,0) 1,0 (1,3)
m
I
CES
V
GE
=0,V
CE
=V
CES
,T
j
=25(125) C
-
4,8 (288)
-
mA
I
C
=1200A, Vcc=900V
-
968
-
mJ
E
on
+ E
off
T
j
=125C Vcc=1200V
-
1428
-
mJ
L
CE
top, bottom
-
3
-
nH
C
CHC
per phase , AC side
-
6,8
-
nF
R
CC-EE
terminal-chip, T
j
=25 C
-
0,13
-
m
Inverse diode
V
F
= V
EC
I
F
= 1200A; T
j
= 25(125) C
measured at terminal
-
1,6 (1,5)
2,0
V
V
TO
T
j
= 25 (125) C
-
1,1 (0,8) 1,3 (1,0)
V
r
T
T
j
= 25 (125) C
-
0,4 (0,6) 0,6 (0,8)
m
I
C
=1200A Vcc=900V
-
172
-
mJ
E
RR
T
j
=125C Vcc=1200V
-
204
-
mJ
Mechanical data
M
dc
DC terminals, SI Units
6
-
8
Nm
M
ac
AC terminals, SI Units
13
-
15
Nm
w
SKiiP
3 System w/o heat sink
-
3,1
-
kg
w
heat sink
-
9,7
-
kg
Thermal characteristics (PX16 heat sink with fan SKF16B-230-1); "s" reference
to heat sink; "r" reference to built-in temperature sensor (acc. IEC 60747-15)
R
thjsIGBT
per IGBT
-
-
0,015
C/W
R
thjsdiode
per diode
-
-
0,029
C/W
Z
th
R
i
(mK/W) (max. values)
tau
i
(s)
1
2
3
4
1
2
3
4
IGBT
jr
5,6
6,0
6,4
0,0
363,0
0,18
0,04
1,0
diode
jr
10,0
8,4
14,8
14,8
50,0
5,0
0,25
0,04
heatsink
ra
3,1
17,3
3,7
0,9
230
78
13,0
0,4
SKiiP
3
SK integrated intelligent
Power
2-pack
SKiiP 2013GB173-4DL
Preliminary data
Case S43
Features
SKiiP technology inside
Trench IGBTs
CAL HD diode technology
integrated current sensor
integrated temperature sensor
integrated heat sink
IEC 60721-3-3 (humidity) class
3K3/IE32 (SKiiP
3 System)
IEC 68T.1 (climate) 40/125/56
(SKiiP
3 power section)
UL recognized File no. E63532
(SKiiP
3 power section)
1) with assembly of suitable MKP
capacitor per terminal
(SEMIKRON type is
recommended)
8) AC connection busbars must
be connected by the user;
copper busbars available on
request
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
SKiiP 2013GB173-4DL
B 7
-
20
030606
by SEMIKRON
SKiiP 3
SK integrated intelligent
Power
SKiiP 2013GB173-4DL
Preliminary data
II. Integrated gate driver
Absolute maximum ratings
Symbol
Term
Value
Unit
V
S2
unstabilized 24V power supply
30
V
V
iH
input signal voltage (high)
15 + 0,3
V
dv/dt
secondary to primary side
75
kV/s
V
isolIO
input / output (AC, rms, 2 s)
4000
V
V
isolPD
partial discharge extinction voltage,
rms, Q
PD
10 pC;
1500
V
V
isol12
output 1 / output 2 (AC, rms, 2s)
1500
V
f switching frequency
6 kHz
T
op
(T
stg
)
operating / storage temperature
- 40 ... + 85
C
Electrical characteristics
(T
a
= 25 C)
Values
Symbol
Term
min
typ
max. Units
V
S2
supply voltage non stabilized
13
24
27
V
I
S2
V
S2
= 24V
324 + 45*f / kHz
+
0,00011 * (I
AC
/A)
2
mA
V
iT+
input threshold voltage (High)
11,2
V
V
iT-
input threshold voltage (Low)
5,4
V
R
in
input resistance
10
k
C
in
input capacitance
1
nF
t
d(on)IO
input-output turn-on propagation time
1,1
s
t
d(off)IO
input-output turn-off propagation time
1,1
s
t
pERRRESET
error memory reset time
9
s
t
TD
top/bottom switch: interlock time
3,3
s
I
analogOUT
max. 5mA ; 8 V corresponds to
2000
A
I
S1out
15 V supply voltage for external
components; max load current
50
mA
I
TRIPSC
over current trip level ( I
analog OUT
= 10V)
2500
A
T
tp
over temperature protection
110
120
C
U
DCTRIP
U
DC
-protection ( U
analog OUT
= 9V)
(option for GB types)
not
imple
mente
d
V
For electrical and thermal design support please use SEMISEL. Access to SEMISEL is via SEMIKRON website
http://www.semikron.com.
Gate driver features
CMOS compatible inputs
wide range power supply
integrated circuitry to sense
phase current, heat sink
temperature and DC-bus voltage
(option)
short circuit protection
over current protection
over voltage protection (option)
power supply protected against
under voltage
interlock of top/bottom switch
isolation by transformers
fibre optic interface (option for
GB-types only)
IEC 68T.1 (climate) 40/85/56
(SKiiP
3 gate driver)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.