by SEMIKRON
000131
B 16 53
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
Inverter & Chopper
V
CES
V
GES
I
C
I
CM
I
F
= I
C
I
FM
= I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
20
23 / 15
46 / 30
24 / 17
48 / 34
V
V
A
A
A
A
Bridge Rectifier
V
RRM
I
D
I
FSM
I
2
t
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
1500
25
700
2400
V
A
A
A
2
s
T
j
T
stg
V
isol
AC, 1 min.
40 . . . + 150
40 . . . + 125
2500
C
C
V
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT - Inverter & Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 15 A
T
j
= 25 (125)
C
V
CC
= 600 V; V
GE
= 15 V
I
C
= 15 A; T
j
= 125
C
R
gon
= R
goff
= 82
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,5(3,1)
55
45
400
70
4,0
1,0
3,0(3,7)
110
90
600
100
1,4
V
ns
ns
ns
ns
mJ
nF
K/W
Diode
2)
- Inverter & Chopper
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 15 A
T
j
= 25 (125)
C
T
j
= 125 C
T
j
= 125 C
I
F
= 15 A, V
R
= 600 V
di
F
/dt = 400 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
2,0(1,8)
1,0
53
16
2,7
0,6
2,5(2,3)
1,2
73
1,7
V
V
m
A
C
mJ
K/W
Diode - Rectifier
V
F
R
thjh
I
F
= 35 A, T
j
= 25 C
per diode
1,2
1,6
V
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Shunts (SKiiP 22 NAB 12 I)
R
cs(dc)
R
cs(ac)
5 %
4)
1 %
16,5
10
m
m
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 8
2
M2
2,5
Nm
SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I
MiniSKiiP 2
SEMIKRON integrated
intelligent Power
SKiiP 22 NAB 12
SKiiP 22 NAB 12 I
3)
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M2
UL recognized file no. E63532
specification of shunts and
temperature sensor see part A
common characteristics see
page B 16 4
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
3)
With integrated DC and/or AC
shunts
4)
accuracy of pure shunt, please
note that for DC shunt no
separate sensing contact is
used.
B 16 54
000131
by SEMIKRON
22NA1204.xls
0
1
2
3
4
5
0
50
100
150
R
G
E
mWs
Eon
Eoff
22NA1203.xls
0
1
2
3
4
5
0
10
20
30
I
C
A
E
mWs
Eon
Eoff
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
R
G
= 52
I
Cpuls
= 15 A
V
GE
= 0 V
f = 1 MHz
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
B 16 4
0698
by SEMIKRON
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
T
j
= 150 C
V
GE
=
15 V
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini1207
Th [C]
0
0,5
1
1,5
2
2,5
0
500
1000
1500
ICpuls/IC
Mini1209
VCE [V]
0
2
4
6
8
10
12
0
500
1000
1500
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
ICsc/ICN
Mini1210
VCE [V]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
MiniSKiiP 1200 V
MiniSKiiP 2
SKiiP 20 NAB 06 ...
SKiiP 21 NAB 06 ...
SKiiP 20 NAB 12 ...
SKiiP 22 NAB 12 ...
Circuit
Case M2
Layout and connections for the
customer's printed circuit board
Note: The shunts are available
only by option I
-DC/A
Isw
0w
Isv
0v
0u
Isu
I+
B
-T
L3
L1
L2
+rect
-DC
-rect
g1
U
V
W
+T
+DC
g3
g5
g2
g6
g4
gB
+B
-B
Hauptanschlu
power connector
control pin
Steueranschlu
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