SEMiX
13s
Trench IGBT Modules
SEMiX 201GD066HDs
Target Data
Features
Typical Applications
Remarks
GD
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
IGBT
Inverse diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
SEMiX 201GD066HDs
1
01-12-2005 GES
by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
SEMiX 201GD066HDs
2
01-12-2005 GES
by SEMIKRON
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
SEMiX 201GD066HDs
3
01-12-2005 GES
by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SEMiX 201GD066HDs
4
01-12-2005 GES
by SEMIKRON
PDF 
ZIP