SEMiX
3
Trench IGBT Modules
SEMiX 703GB126HD
SEMiX 703GAL126HD
SEMiX 703GAR126HD
Preliminary Data
Features
Typical Applications
GB
GAL
GAR
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
IGBT
Inverse diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
SEMiX 703GB126HD ...
1
15-06-2005 SEN
by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
SEMiX 703GB126HD ...
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15-06-2005 SEN
by SEMIKRON
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
SEMiX 703GB126HD ...
3
15-06-2005 SEN
by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SEMiX 703GB126HD ...
4
15-06-2005 SEN
by SEMIKRON
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