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Электронный компонент: SK50GAR067

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SEMITOP
3
IGBT Module
SK 50 GAL 067
SK 50 GAR 067
SK 50 GB 067
Target Data
Features
Typical Applications
GB
GAL
GAR
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
IGBT
Inverse / Freewheeling diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT
Inverse / Freewheeling diode
Mechanical data
SK 50 GB 067
1
02-11-2005 RAM
by SEMIKRON
Fig.5 Typ. output characteristic, t
p
= 250 s, 25 C
Fig.6 Typ. output characteristic, t
p
= 25 s, 125 C
Fig.7 Turn-on / -off energy = f (I
C
)
Fig.8 Turn-on / -off energy = f (R
G
)
Fig.9 Typ. gate charge characteristic
SK 50 GB 067
2
02-11-2005 RAM
by SEMIKRON
Fig.11 Typ. switching times vs. current
Fig.12 Typ. switching times vs. gate resistor R
G
Fig. 14 Typ.Diode forward characteristic
SK 50 GB 067
3
02-11-2005 RAM
by SEMIKRON
UL Recognized
File no. E 63532
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 50 GB 067
4
02-11-2005 RAM
by SEMIKRON