by SEMIKRON
0898
B 17 21
V
RSM
V
RRM
I
D
(T
h
= 80C)
V
51 A
72 A
800
1200
1600
SK 50 B 08
SK 50 B 12
SK 50 B 16
SK 70 D 08
SK 70 D 12
SK 70 D 16
Symbol Conditions
SK 50 B
SK 70 D
Units
I
D
T
h
= 80 C
51
72
A
I
FSM
i
2
t
T
vj
= 25 C; 10 ms
T
vj
= 125 C; 10 ms
T
vj
= 25 C; 8,3...10 ms
T
vj
= 125 C; 8,3...10 ms
350
A
A
A
2
s
A
2
s
V
F
V
(T0)
r
T
I
RD
T
vj
= 125 C; (I
T
= 25 A); max.
T
vj
= 125 C
T
vj
= 125 C
T
vj
= 25 C; V
RD
= V
RRM
1,1
0,8
13
V
V
m
mA
R
thjh
per diode
per module
1,7
0,43
1,7
0,28
K/W
K/W
T
vj
T
st
T
solder
terminals, 10 s
- 40 ... + 125
- 40 ... + 125
260
C
C
C
V
isol
M
1
w
a.c. 50 Hz; r.m.s. 1 s/1 min
case to heatsink
SI units
US units
3000 / 2500
2,0
17,6
-
V
Nm
lb.in.
g
Case
T 6
SEMITOP
2
Bridge Rectifier
SK 50 B
SK 70 D
Preliminary Data
Features
Compact Design
One screw mounting
Heat transfer and isolation
through direct copper bonded
aluminium oxide ceramic (DCB)
Up to 1600V reverse voltage
High surge currents
Glass passivated diode chips
Typical Applications
Input rectifier for power supplies
Rectifier
B
D
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