Fig.5 Typ. output characteristic, t
p
= 250 s, 25 C
Fig.6 Typ. output characteristic, t
p
= 25 s, 125 C
Fig.7 Turn-on / -off energy = f (I
C
)
Fig.8 Turn-on / -off energy = f (R
G
)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. V
CE
SK 80 GB 063
2
19-10-2005 RAM
by SEMIKRON
Fig.11 Typ. switching times vs. I
C
Fig.12 Typ. switching times vs. gate resistor R
G
Fig.13 Diode turn-off energy dissipation per pulse
SK 80 GB 063
3
19-10-2005 RAM
by SEMIKRON
UL Recognized
File no. E 63532
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 80 GB 063
4
19-10-2005 RAM
by SEMIKRON
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