Fig. 15 Input Bridge Diode forward characteristic
Fig. 16 Typical Output Characteristic
Fig. 17 Turm-on/-off energy = f(Ic)
Fig. 18 Turm-on/-off energy = f(Rg)
Fig. 19 Typical gate charge characteristic
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Fig. 21 Typical switching time vs. Ic
Fig. 22 Typical switching time vs. Rg
Fig. 24 Typical FWD forward characteristic
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Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
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