SEMITOP
2
IGBT Module
SK 8 GD 126
Target Data
Features
Typical Applications
GD
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
IGBT
Inverse/Freewheeling CAL diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT
Inverse/Freewheeling CAL diode
Mechanical data
SK 8 GD 126
1
19-10-2005 RAM
by SEMIKRON
Fig.5 Typ. output characteristic, t
p
= 80 s, 25C, 125 C
Fig.7 Turn-on / -off energy = f (I
C
)
Fig.8 Turn-on / -off energy = f (R
G
)
Fig.9 Typ. gate charge characteristic
SK 8 GD 126
2
19-10-2005 RAM
by SEMIKRON
Fig.11 Typ. switching times vs. I
C
Fig.12 Typ. switching times vs. gate resistor R
G
Fig.13a Diode turn-off energy dissipation per pulse
Fig.13b Diode turn-off energy dissipation per pulse
SK 8 GD 126
3
19-10-2005 RAM
by SEMIKRON
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 8 GD 126
4
19-10-2005 RAM
by SEMIKRON
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