SEMITRANS
M
IGBT Modules
SKD 100 GAL 123 D
Input bridge B6U with
brake chopper
SKD 100 GAL
Features
Round main terminals (2 mm
)
Easy drilling of PCB
Input diodes glass passivated
1400 V PIV
High I
2
t rating (inrush current)
IGBT is latch-up free, homoge-
neous NPT silicon-structure
High short circuit capability,
self limiting to 6 * I
cnom
Fast & soft CAL diodes
8)
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications:
Input rectifier bridge (B6U) with
brake chopper for PWM inverter
drives using SEMITRANS
SKM 75GD123D
1)
T
case
= 25
C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 600 V,
di
F
/dt = 800 A/
s
,
V
GE
= 0 V
3)
Use V
GEoff
= -5 ... - 15 V
8)
CAL = Controlled Axial Lifetime
Technology.
9)
Data D1 - D6, case and
mech. data
B 6 232
Absolute Maximum Ratings
Values
Symbol
Conditions
1)
Units
V
CES
1200
V
V
CGR
R
GE
= 20 k
1200
V
I
C
T
case
= 25/80
C
100 / 90
A
I
CM
T
case
= 25/80
C; t
p
= 1 ms
200 / 180
A
V
GES
20
V
P
tot
per IGBT/D1/D8, T
case
=25
C
690 / 125 / 125
W
T
j
, (T
stg
)
40 . . .+150 (125)
C
V
isol
AC, 1 min.
2 500
V
humidity
DIN 40 040
Class F
climate
DIN IEC 68 T.1
40/125/56
Diodes
9)
D1-6
D7
D8
I
F
T
case
= 80
C
9)
30
30
A
I
FM
= I
CM
T
case
= 80
C; t
p
= 1 ms
60
60
A
I
FSM
t
p
= 10 ms; sin.; T
j
= 150 C
720
350
350
A
I
2
t
t
p
= 10 ms; T
j
= 150 C
2600
600
600
A
2
s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE
= 0, I
C
= 4 mA
V
CES
V
V
GE(th)
V
GE
= V
CE
, I
C
= 2 mA
4,5
5,5
6,5
V
I
CES
V
GE
= 0
T
j
= 25
C
0,8
1,5
mA
V
CE
= V
CES
T
j
= 125
C
6
mA
I
GES
V
GE
= 20 V, V
CE
= 0
300
nA
V
CEsat
I
C
= 75 A V
GE
= 15 V;
2,5(3,1) 3(3,7)
V
V
CEsat
I
C
= 100 A T
j
= 25 (125)
C
2,8(3,6)
V
g
fs
V
CE
= 20 V, I
C
= 75 A
31
S
C
CHC
per IGBT
350
pF
C
ies
V
GE
= 0
5
6,6
nF
C
oes
V
CE
= 25 V
720
900
pF
C
res
f = 1 MHz
380
500
pF
t
d(on)
V
CC
= 600 V
30
60
ns
t
r
V
GE
= + 15 V / - 15 V
3)
70
140
ns
t
d(off)
I
C
= 75 A, ind. load
450
600
ns
t
f
R
Gon
= R
Goff
= 15
70
100
ns
E
on
T
j
= 125
C
10
mWs
E
off
8
mWs
Inverse Diode D7
8)
of brake chopper
V
F
= V
EC
I
F
= 25 A
V
GE
= 0 V;
2,0(1,8)
2,5
V
V
F
= V
EC
I
F
= 40 A
T
j
= 25 (125)
C
2,2(2,1)
V
V
TO
T
j
= 125 C
1,1
1,2
V
r
T
T
j
= 125
C
25
44
m
I
RRM
I
F
= 25 A;
T
j
= 25 (125)
C
2)
(25)
A
Q
rr
I
F
= 25 A;
T
j
= 25 (125)
C
2)
2(4,5)
C
FWD D8 of "GAL" brake chopper
8)
V
F
= V
EC
I
F
= 25 A
V
GE
= 0 V;
2,0 (1,8)
2,5
V
V
F
= V
EC
I
F
= 40 A
T
j
= 25 (125)
C
2,3 (2,1)
V
V
TO
T
j
= 125 C
1,2
V
r
T
T
j
= 125
C
25
44
m
I
RRM
I
F
= 25 A;
T
j
= 25 (125)
C
2)
19(25)
A
Q
rr
I
F
= 25 A;
T
j
= 25 (125)
C
2)
1,5(4,5)
C
Thermal Characteristics
R
thjc
per IGBT / diode D1..6
9)
0,18 / 1
C/W
R
thjc
per diode D7 / D8
1,0 / 1,0
C/W
R
thch
per module / diode; IGBT
0,05 / 0,4
C/W
7D-Pack = 7 Diodes Pack
by SEMIKRON
0898
B 6 231
by SEMIKRON
B 6 232
SKD 100 GAL 123 D ...
0898
This is an electrostatic discharge
sensitive device (ESD). Please ob-
serve the international standard
IEC 747-1, Chapter IX.
Two devices are supplied in one
SEMIBOX A without mounting hard-
ware.
Larger Packing units (
10) are used
if suitable.
SEMIBOX
C - 1.
For the IGBT use diagrams
of type SKM 100 GB 123 D
B 6 - 112 etc.
For diodes D7/D8 use diode
diagrams of type SKM 40 GD 123 D,
B 6 - 72
Characteristics
continued
Symbol
Conditions
1)
Values
Units
min.
typ.
max.
Input
Bridge Rectifier D1...D6
V
RRM
1400
V
I
D
T
case
= 80 C;
100
A
V
F
T
vj
= 25 C; I
F
= 75 A
1,45
V
V
TO
T
v
j = 150 C
0,8
V
r
T
T
vj
= 150 C
8,5
m
R
thjc
D1...D6
1,0
K/W
T
solder
> 5 s, max. 15 sec. (transfer)
180
250
C
Mechanical Data
M1
to heatsink, SI Units
(M5)
4
5
Nm
to heatsink, US Units
35
44
lb.in.
a
5x9,81
m/s
2
w
175
g
Case outline and circuit diagram
SEMITRANS
7D-Pack = Seven Diodes Pack
(Sixpack modified)
Case D 69 A
*) Plastic collar around
pin B for UL creepage
distance of > 12,7 mm
Dimensions in mm
*)
by SEMIKRON
B 6 112
SKM 100 GB 123 D...
0898
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
R
G
= 15
1 pulse
T
C
= 25 C
T
j
< 150 C
Not for
linear use
T
j
< 150 C
V
GE
= + 15 V
t
sc
< 10
s
L < 25 nH
I
CN
= 75 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 75 A
T
j
< 150 C
V
GE
= 15 V
R
Goff
= 15
I
C
= 75 A
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
0,1
1
10
100
1000
1
10
100
1000
10000
10ms
1ms
100us
t(p)=
21us
IC [A]
752iu.vpo
VCE [V]
0
0,5
1
1,5
2
2,5
0
500
1000
1500
ICpuls/IC
752rso.vpo
VCE [V]
0
2
4
6
8
10
12
0
500
1000
1500
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
ICSC/ICN
752soas.vpo
VCE [V]
by SEMIKRON
B 6 113
0898
T
j
= 150 C
V
GE
> 15 V
P
cond(t)
= V
CEsat(t)
. I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
. I
C(t)
V
CE(TO)(Tj)
1,5 + 0,002 (T
j
- 25) [V]
typ.: r
CE(Tj)
= 0,013 + 0,00005 (T
j
- 25) [
]
max.: r
CE(Tj)
= 0,020 + 0,00007 (T
j
- 25) [
]
valid for V
GE
= + 15
+
2
-
1
[V]; I
C
> 0,3 I
Cnom
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
Fig. 9 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 10 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 11 Saturation characteristic (IGBT)
Fig. 12 Typ. transfer characteristic, t
p
= 80
s; V
CE
= 20 V
Calculation elements and equations
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
17V
13V
11V
9V
15V
7V
IC [A]
752us3.vpo
VCE [V]
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
17V
15V
13V
9V
7V
11V
IC [A]
752us7.vpo
VCE [V]
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
IC [A]
752gf3.vpo
VGE [V]
by SEMIKRON
B 6 114
SKM 100 GB 123 D...
0898
V
GE
= 0 V
f = 1 MHZ
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 75 A
induct. load
I
Cpuls
= 75 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
R
Gon
= 15
R
Goff
= 15
induct. load
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
600
600V
800V
VGE [V]
752Qg3.vpo
QG [nC]
0,1
1
10
100
0
10
20
30
40
Ciss
Coss
Crss
C [nF]
752C.vpo
VCE [V]
10
100
1000
10000
30
50
70
90
110
130
150
170
tdoff
tr
tdon
tf
t [ns]
752tic.vpo
IC [A]
WGRII
WU
WGRQ
WI
W >QV@
WUJYSR
5* >:
:@
0*%;/6
,
$
(
411
P-
60
5
*
9
&&
9
7
M
&
9
*(
9
by SEMIKRON
B 6 115
0796
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